APT45GP120BG - аналоги и описание IGBT

 

APT45GP120BG - аналоги, основные параметры, даташиты

Наименование: APT45GP120BG

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 625 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 54 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3 V @25℃

tr ⓘ - Время нарастания типовое: 29 nS

Coesⓘ - Выходная емкость, типовая: 300 pF

Тип корпуса: TO247

 Аналог (замена) для APT45GP120BG

- подбор ⓘ IGBT транзистора по параметрам

 

APT45GP120BG даташит

 ..1. Size:102K  apt
 apt45gp120bg.pdf pdf_icon

APT45GP120BG

APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge

 3.1. Size:436K  apt
 apt45gp120b2dq2g.pdf pdf_icon

APT45GP120BG

TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 3.2. Size:196K  apt
 apt45gp120b2df2.pdf pdf_icon

APT45GP120BG

APT45GP120B2DF2 TYPICAL PERFORMANCE CURVES APT45GP120B2DF2 1200V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C Low Conduction Loss 10

 3.3. Size:88K  apt
 apt45gp120b.pdf pdf_icon

APT45GP120BG

APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT75GP120JDQ3 , APT100GT120JR , APT100GT120JRDL , APT200GT60JRDL , APT80GA60B , APT80GA60LD40 , APT80GA60S , APT45GP120B2DQ2G , FGPF4533 , APT80GA90B , APT80GA90LD40 , APT80GA90S , APT50GP60BG , APT50GP60SG , MPMB75B120RH , APT50GT120B2RDQ2G , APT50GT120B2RG .

History: APT50GN120L2DQ2G

 

 

 

 

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