Справочник IGBT. APT80GA90LD40

 

APT80GA90LD40 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT80GA90LD40
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 29 nS
   Coesⓘ - Выходная емкость, типовая: 411 pF
   Qgⓘ - Общий заряд затвора, typ: 200 nC
   Тип корпуса: TO264

 Аналог (замена) для APT80GA90LD40

 

 

APT80GA90LD40 Datasheet (PDF)

 ..1. Size:247K  microsemi
 apt80ga90ld40.pdf

APT80GA90LD40 APT80GA90LD40

APT80GA90LD40 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunit

 5.1. Size:202K  microsemi
 apt80ga90b apt80ga90s.pdf

APT80GA90LD40 APT80GA90LD40

APT80GA90B APT80GA90S 900V High Speed PT IGBTAPT80GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 7.1. Size:162K  microsemi
 apt80ga60ld40.pdf

APT80GA90LD40 APT80GA90LD40

APT80GA60B2D40 APT80GA60LD40 600V APT80GA60B2D40High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

 7.2. Size:215K  microsemi
 apt80ga60s.pdf

APT80GA90LD40 APT80GA90LD40

APT80GA60B APT80GA60S 600V High Speed PT IGBTAPT80GA60BPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 7.3. Size:215K  microsemi
 apt80ga60b.pdf

APT80GA90LD40 APT80GA90LD40

APT80GA60B APT80GA60S 600V High Speed PT IGBTAPT80GA60BPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

Другие IGBT... APT100GT120JRDL , APT200GT60JRDL , APT80GA60B , APT80GA60LD40 , APT80GA60S , APT45GP120B2DQ2G , APT45GP120BG , APT80GA90B , RJP63K2DPP-M0 , APT80GA90S , APT50GP60BG , APT50GP60SG , MPMB75B120RH , APT50GT120B2RDQ2G , APT50GT120B2RG , MPMB100B120RH , APT150GN120J .

 

 
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