Справочник IGBT. APT25GP90BG

 

APT25GP90BG Даташит. Аналоги. Параметры и характеристики.


   Наименование: APT25GP90BG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 417 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 36 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.7 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 16 nS
   Coesⓘ - Выходная емкость, типовая: 220 pF
   Тип корпуса: TO247
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APT25GP90BG Datasheet (PDF)

 ..1. Size:188K  apt
 apt25gp90bg.pdf pdf_icon

APT25GP90BG

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

 4.1. Size:205K  apt
 apt25gp90bdf1.pdf pdf_icon

APT25GP90BG

TYPICAL PERFORMANCE CURVES APT25GP90BDF1APT25GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz

 4.2. Size:441K  apt
 apt25gp90bdq1g.pdf pdf_icon

APT25GP90BG

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 4.3. Size:175K  apt
 apt25gp90b.pdf pdf_icon

APT25GP90BG

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , SGT40N60FD2PN , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP , APT50GN60BG , APT60GA60JD60 , IRGP4063-E .

History: SKM75GB173D | IXGC16N60C2 | IXYP10N65C3D1 | APT20GF120KR | AFGHL40T65SPD | MM50G3U120BMX | IXYH24N90C3D1

 

 
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