IRG7PH46UD-E - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRG7PH46UD-E
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 390 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 108 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 40 nS
Coesⓘ - Выходная емкость, типовая: 150 pF
Qgⓘ - Общий заряд затвора, typ: 220 nC
Тип корпуса: TO247AD
Аналог (замена) для IRG7PH46UD-E
IRG7PH46UD-E Datasheet (PDF)
irg7ph46ud-e.pdf
IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame
irg7ph46ud.pdf
IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame
irg7ph46u.pdf
PD - 96305AIRG7PH46UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH46U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 75A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC
irg7ph42u-ep.pdf
PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC
irg7ph42ud-ep.pdf
PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod
irg7ph42u.pdf
PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC
irg7ph44k10d.pdf
IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100C tSC 10s, TJ(max) = 150C GE C E G C G EVCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbFIRG7PH44K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector E
irg7ph42ud1m.pdf
IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE
irg7ph42ud.pdf
PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod
irg7ph42ud1.pdf
IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2