APT47GA60JD40 - аналоги и описание IGBT

APT47GA60JD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity

APT47N60BC3 APT47N60SC3 600V 47A 0.070 Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT47N60BC3_SC3

FINAL DATA SHEET 600V 46A 0.083 APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction FREDFET (B) COOLMOS Power Semiconductors D3PAK Ultra Low RDS(ON) Intrinsic Fast-Recovery Body Diode (S) Low Miller Capacitance Extreme Low Reverse Recovery Charge Ultra Low Gate Charge, Qg Ideal For Z

APT47N65BC3 600V 47A 0.070 Super Junction MOSFET COOLMOS Power Semiconductors D3 Ultra low RDS(ON) Increased Power Dissipation Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT47N65BC3 UNIT VDSS Drain-So

APT47N60BC3(G) APT47N60SC3(G) 600V 47A 0.070 Super Junction MOSFET D3PAK Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package. G RoHS Compliant S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT47N60B

APT47M60J 600V, 49A, 0.09 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

APT47F60J 600V, 49A, 0.09 Max, trr 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the

isc N-Channel MOSFET Transistor APT47N65BC3 FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.07 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor APT47N60BC3 FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.07 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp