Справочник IGBT. APT25GN120BG

 

APT25GN120BG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT25GN120BG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 272 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 33 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 17 nS
   Coesⓘ - Выходная емкость, типовая: 105 pF
   Qgⓘ - Общий заряд затвора, typ: 155 nC
   Тип корпуса: TO247

 Аналог (замена) для APT25GN120BG

 

 

APT25GN120BG Datasheet (PDF)

 ..1. Size:195K  apt
 apt25gn120bg.pdf

APT25GN120BG APT25GN120BG

TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 1200V APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B)low VCE(ON) and are ideal for low frequency applications that require absolute minimum D3PAKconduction loss. Easy paralleling is a re

 3.1. Size:220K  apt
 apt25gn120b2dq2g.pdf

APT25GN120BG APT25GN120BG

TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2(G) 1200V APT25GN120B2DQ2 APT25GN120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B2)have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Maxresults in superior VCE(on) performance. Easy paralleling resu

 3.2. Size:184K  apt
 apt25gn120b.pdf

APT25GN120BG APT25GN120BG

TYPICAL PERFORMANCE CURVES APT25GN120BAPT25GN120B1200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

 4.1. Size:195K  apt
 apt25gn120sg.pdf

APT25GN120BG APT25GN120BG

TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 1200V APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B)low VCE(ON) and are ideal for low frequency applications that require absolute minimum D3PAKconduction loss. Easy paralleling is a re

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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