Справочник IGBT. RJH60A85RDPP-M0

 

RJH60A85RDPP-M0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60A85RDPP-M0
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 39.7
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 30
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.5
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 17
   Емкость коллектора типовая (Cc), pf: 48
   Общий заряд затвора (Qg), typ, nC: 56
   Тип корпуса: TO220FL

 Аналог (замена) для RJH60A85RDPP-M0

 

 

RJH60A85RDPP-M0 Datasheet (PDF)

 0.1. Size:120K  renesas
 rjh60a85rdpp-m0.pdf

RJH60A85RDPP-M0 RJH60A85RDPP-M0

Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160

 3.1. Size:111K  renesas
 rjh60a85rdpe.pdf

RJH60A85RDPP-M0 RJH60A85RDPP-M0

Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160 ns

 7.1. Size:110K  renesas
 rjh60a83rdpe.pdf

RJH60A85RDPP-M0 RJH60A85RDPP-M0

Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130 ns

 7.2. Size:119K  renesas
 rjh60a83rdpp-m0.pdf

RJH60A85RDPP-M0 RJH60A85RDPP-M0

Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130

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