Справочник IGBT. RJH60A85RDPP-M0

 

RJH60A85RDPP-M0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60A85RDPP-M0
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 39.7 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 17 nS
   Coesⓘ - Выходная емкость, типовая: 48 pF
   Тип корпуса: TO220FL

 Аналог (замена) для RJH60A85RDPP-M0

 

 

RJH60A85RDPP-M0 Datasheet (PDF)

 0.1. Size:120K  renesas
 rjh60a85rdpp-m0.pdf

RJH60A85RDPP-M0 RJH60A85RDPP-M0

Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160

 3.1. Size:111K  renesas
 rjh60a85rdpe.pdf

RJH60A85RDPP-M0 RJH60A85RDPP-M0

Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200600V - 15A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 160 ns

 7.1. Size:110K  renesas
 rjh60a83rdpe.pdf

RJH60A85RDPP-M0 RJH60A85RDPP-M0

Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130 ns

 7.2. Size:119K  renesas
 rjh60a83rdpp-m0.pdf

RJH60A85RDPP-M0 RJH60A85RDPP-M0

Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200600V - 10A - IGBT Rev.2.00Application: Inverter Jul 12, 2012Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 130

Другие IGBT... IKA08N65H5 , IKA15N65F5 , IKA15N65H5 , RJH60D2DPP-E0 , RJH60V2BDPP-M0 , NTE3303 , IRGR2B60KD , STGF20H60DF , MGD623S , RJH60V3BDPP-M0 , RJP5001APP-M0 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE .

 

 
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