RJH60A83RDPE - аналоги, параметры транзистора

RJH60A83RDPE даташит

..1. Size:110K renesas
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Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200 600V - 10A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 130 ns

3.1. Size:119K renesas
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Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200 600V - 10A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 130

7.1. Size:111K renesas
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Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200 600V - 15A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 160 ns

7.2. Size:120K renesas
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Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200 600V - 15A - IGBT Rev.2.00 Application Inverter Jul 12, 2012 Features Reverse conducting IGBT with monolithic diode Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 160

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