Справочник IGBT. HGTD10N50F1S

 

HGTD10N50F1S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HGTD10N50F1S
   Тип транзистора: IGBT
   Маркировка: G10N50
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 500 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 12 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 4.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 35 nS
   Qgⓘ - Общий заряд затвора, typ: 13.4 nC
   Тип корпуса: TO252

 Аналог (замена) для HGTD10N50F1S

 

 

HGTD10N50F1S Datasheet (PDF)

 ..1. Size:40K  1
 hgtd10n40f1 hgtd10n40f1s hgtd10n50f1 hgtd10n50f1s.pdf

HGTD10N50F1S HGTD10N50F1S

HGTD10N40F1, HGTD10N40F1S,S E M I C O N D U C T O RHGTD10N50F1, HGTD10N50F1S10A, 400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTD10N40F1, HGTD10N50F1 10A, 400V and 500VJEDEC TO-251AA VCE(ON) 2.5V Max.EMITTER TFALL 1.4sCOLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR(FLANGE) High Input ImpedanceApplications

 7.1. Size:40K  harris semi
 hgtd10n4.pdf

HGTD10N50F1S HGTD10N50F1S

HGTD10N40F1, HGTD10N40F1S,S E M I C O N D U C T O RHGTD10N50F1, HGTD10N50F1S10A, 400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTD10N40F1, HGTD10N50F1 10A, 400V and 500VJEDEC TO-251AA VCE(ON) 2.5V Max.EMITTER TFALL 1.4sCOLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR(FLANGE) High Input ImpedanceApplications

 9.1. Size:351K  1
 hgtd1n120cns hgtp1n120cn.pdf

HGTD10N50F1S HGTD10N50F1S

 9.2. Size:92K  fairchild semi
 hgtd1n120bns hgtp1n120bn.pdf

HGTD10N50F1S HGTD10N50F1S

HGTD1N120BNS, HGTP1N120BNData Sheet January 20015.3A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150

 9.3. Size:217K  onsemi
 hgtd1n120bns hgtp1n120bn.pdf

HGTD10N50F1S HGTD10N50F1S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие IGBT... HGT1S7N60C3DS9A , HGT5A40N60A4D , HGT1Y40N60A4D , HGT5A40N60A4 , HGTD10N40F1 , HGTD10N40F1S , HGTD10N40F1S9A , HGTD10N50F1 , IRGP4086 , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , HGTD3N60A4S , HGTD3N60B3 , HGTD3N60B3S .

 

 
Back to Top