HGTD10N50F1S9A - аналоги и описание IGBT

HGTD10N40F1, HGTD10N40F1S, S E M I C O N D U C T O R HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTD10N40F1, HGTD10N50F1 10A, 400V and 500V JEDEC TO-251AA VCE(ON) 2.5V Max. EMITTER TFALL 1.4 s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR (FLANGE) High Input Impedance Applications

HGTD10N40F1, HGTD10N40F1S, S E M I C O N D U C T O R HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTD10N40F1, HGTD10N50F1 10A, 400V and 500V JEDEC TO-251AA VCE(ON) 2.5V Max. EMITTER TFALL 1.4 s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR (FLANGE) High Input Impedance Applications

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120 J at TJ = 150

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