STGB7H60DF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: STGB7H60DF
Тип транзистора: IGBT + Diode
Маркировка: GB7H60DF
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 88 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 7 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.9 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 12.2 nS
Coesⓘ - Выходная емкость, типовая: 51 pF
Qgⓘ - Общий заряд затвора, typ: 46 nC
Тип корпуса: TO263
Аналог (замена) для STGB7H60DF
STGB7H60DF Datasheet (PDF)
stgb7h60df stgf7h60df stgp7h60df.pdf
STGB7H60DF, STGF7H60DF, STGP7H60DFTrench gate field-stop IGBT, H series 600 V, 7 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor control
stgb7h60df.pdf
STGB7H60DF, STGF7H60DF, STGP7H60DFTrench gate field-stop IGBT, H series 600 V, 7 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor control
stgp7nc60hd stgf7nc60hd stgb7nc60hd.pdf
STGP7NC60HDSTGF7NC60HD - STGB7NC60HDN-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAKVery Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP7NC60HD 600 V
stgb7nb40lz.pdf
STGB7NB40LZN-CHANNEL CLAMPED 14A - D2PAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB7NB40LZ CLAMPED
stgb7nb60hd.pdf
STGB7NB60HDN-CHANNEL 7A - 600V DPAK PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB7NB60HD 600 V
stgb7nc60hd.pdf
STGB7NC60HD, STGF7NC60HD, STGP7NC60HDN-channel 14 A, 600 V, very fast IGBT with Ultrafast diodeDatasheet - production dataFeaturesTABTAB Low on-voltage drop (VCE(sat)) Off losses include tail current33 1 Losses include diode recovery energy 21 High frequency operation up to 70 kHz DPAK (TO-263)IPAK (TO-262) Very soft ultra fast recovery anti para
stgb7nc60kd stgp7nc60kd stgf7nc60kd.pdf
STGP7NC60KD - STGF7NC60KDSTGB7NC60KDN-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAKSHORT CIRCUIT RATED PowerMESH IGBTPRODUCT PREVIEWTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC (#) @25C @100CSTGB7NC60KD 600 V
stgb7nb60.pdf
STGB7NB60HD N-CHANNEL 7A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGB7NB60HD 600 V
stgb7nc60hd stgf7nc60hd stgp7nc60hd.pdf
STGB7NC60HD, STGF7NC60HD, STGP7NC60HDN-channel 14 A, 600 V, very fast IGBT with Ultrafast diodeDatasheet - production dataFeaturesTABTAB Low on-voltage drop (VCE(sat)) Off losses include tail current33 1 Losses include diode recovery energy 21 High frequency operation up to 70 kHz DPAK (TO-263)IPAK (TO-262) Very soft ultra fast recovery anti para
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2