Справочник IGBT. IRGB4715D

 

IRGB4715D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRGB4715D

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 100

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.7

Максимально допустимое напряжение эмиттер-затвор (Ueg): 30

Максимальный постоянный ток коллектора (Ic): 21

Максимальная температура перехода (Tj): 175

Время нарастания: 20

Емкость коллектора (Cc), pf: 50

Корпус: TO220AB

Аналог (замена) для IRGB4715D

 

 

IRGB4715D Datasheet (PDF)

1.1. irgb4715d.pdf Size:672K _igbt_a

IRGB4715D
IRGB4715D

IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C E C VCE(ON) typ. = 1.7V @ IC = 8A E G G G C E IRGS4715DPbF  Applications IRGB4715DPbF  n-channel D2‐Pak  TO‐220AB  • Industrial Motor Drive • UPS G C E • Solar Inverters Ga

5.1. irgb420u.pdf Size:102K _international_rectifier

IRGB4715D
IRGB4715D

PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 7.5A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hig

5.2. irgb420ud2.pdf Size:207K _international_rectifier

IRGB4715D
IRGB4715D

PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating f requency (over 5kHz) VCE(sat) ? 2.9V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 7.5A E n-channel Descriptio

 5.3. irgb4b60kd1.pdf Size:377K _international_rectifier

IRGB4715D
IRGB4715D

PD - 94607 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 6.8A, TC=100C 10s Short Circuit Capability. G Square RBSOA. tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175C. VCE(on)

5.4. irgb430ud2.pdf Size:205K _international_rectifier

IRGB4715D
IRGB4715D

PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 15A E n-channel Description C

 5.5. irgb440u.pdf Size:101K _international_rectifier

IRGB4715D
IRGB4715D

PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 22A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hig

5.6. irgb430u.pdf Size:103K _international_rectifier

IRGB4715D
IRGB4715D

PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 15A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hig

5.7. irgb4b60k.pdf Size:345K _international_rectifier

IRGB4715D
IRGB4715D

PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. IC = 6.8A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient. G Maximum Junction Temperature rated at 175C. tsc > 10s, TJ=150C E Benefits VCE

5.8. irgb4059d.pdf Size:290K _igbt_a

IRGB4715D
IRGB4715D

PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 4.0A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5µs SCSOA E • Square RBSOA VCE(on) typ. = 1.75V n-channel • 100% of The Parts Tested for 4X Rat

5.9. irgb4620d.pdf Size:901K _igbt_a

IRGB4715D
IRGB4715D

 IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 20A, TC =100°C E E E E C G C C C G tSC ≥ 5µs, TJ(max) = 175°C G G G E IRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channel App

5.10. irgb4059dpbf.pdf Size:290K _igbt_a

IRGB4715D
IRGB4715D

PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 4.0A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5µs SCSOA E • Square RBSOA VCE(on) typ. = 1.75V n-channel • 100% of The Parts Tested for 4X Rat

5.11. irgb4045d.pdf Size:382K _igbt_a

IRGB4715D
IRGB4715D

PD - 97269A IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 6.0A, TC = 100°C • Low VCE (on) Trench IGBT Technology G • Low Switching Losses tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5µs SCSOA E VCE(on) typ. = 1.7V • Square RBSOA n-channel • 100% of the parts tested for ILM

5.12. irgb4b60kd1.pdf Size:442K _igbt_a

IRGB4715D
IRGB4715D

PD - 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated

5.13. irgb4060d.pdf Size:294K _igbt_a

IRGB4715D
IRGB4715D

PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 8.0A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5µs SCSOA E VCE(on) typ. = 1.55V • Square RBSOA n-channel • 100% of The Parts Tested for 4X Rate

5.14. irgb4056d.pdf Size:351K _igbt_a

IRGB4715D
IRGB4715D

PD - 97188A IRGB4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology C VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 12A, TC = 100°C • 5 µS short circuit SOA • Square RBSOA G tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated current (ILM) •

5.15. auirgb4062d1.pdf Size:415K _igbt_a

IRGB4715D
IRGB4715D

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

5.16. irgb4064d.pdf Size:374K _igbt_a

IRGB4715D
IRGB4715D

PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 10A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5µs SCSOA E • Square RBSOA VCE(on) typ. = 1.6V n-channel • 100% of The Parts Tested for ILM •

5.17. irgb4640d.pdf Size:809K _igbt_a

IRGB4715D
IRGB4715D

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100°C E E E E tSC ≥ 5µs, TJ(max) = 175°C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

5.18. irgb4630d.pdf Size:1268K _igbt_a

IRGB4715D
IRGB4715D

 IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 30A, TC =100°C E E E G E C tSC ≥ 5µs, TJ(max) = 175°C C C C G G G G E IRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl

5.19. irgb4615d.pdf Size:336K _igbt_a

IRGB4715D
IRGB4715D

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C IC = 15A, TC = 100°C E E C G G tsc > 5µs, Tjmax = 175°C G E VCE(on) typ. = 1.55V @ 8A TO-220AB D2-Pak n-channel IRGB4615DPbF IRGS4615DPbF GCE Gate Collector Emitter Applications • Appliance Drives • Inverters • UPS → Features Benefits Low VCE(

5.20. irgb4b60k.pdf Size:299K _igbt_a

IRGB4715D
IRGB4715D

PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 6.8A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G • Maximum Junction Temperature rated at 175°C. tsc > 10µs, TJ=150°C E VCE(on) typ. = 2.1V Benefits

5.21. irgb4607d.pdf Size:858K _igbt_a

IRGB4715D
IRGB4715D

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E E E G C C tSC 5µs, TJ(max) = 175°C G G G E IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E • Industrial Motor Drive

5.22. irgb4062d.pdf Size:434K _igbt_a

IRGB4715D
IRGB4715D

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G tSC 5μs, TJ(max) = 175°C • Square RBSOA • 100% of the parts tested for ILM E

5.23. irgb4061d.pdf Size:405K _igbt_a

IRGB4715D
IRGB4715D

PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology C VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 18A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of the parts tested for 4X rated current (ILM) •

5.24. irgb4610d.pdf Size:428K _igbt_a

IRGB4715D
IRGB4715D

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100°C E E E C G G G G tsc > 5µs, Tjmax = 175°C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter • Appliance Drives • Inverters •

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top

 


IRGB4715D
  IRGB4715D
  IRGB4715D
 

social 

Список транзисторов

Обновления

IGBT: MBQ40T120FES | GT20D201 | MGD633 | IKW30N65WR5 | 2PG001 | FGT612 | FGT412 | FGT313 | FGT312 | FGM603 |
 

 

 

 

 

Back to Top