Справочник IGBT. IRGS4715D

 

IRGS4715D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRGS4715D

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 100

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.7

Максимально допустимое напряжение эмиттер-затвор (Ueg): 30

Максимальный постоянный ток коллектора (Ic): 21

Максимальная температура перехода (Tj): 175

Время нарастания: 20

Емкость коллектора (Cc), pf: 50

Корпус: TO263

Аналог (замена) для IRGS4715D

 

 

IRGS4715D Datasheet (PDF)

1.1. irgs4715d.pdf Size:672K _igbt

IRGS4715D
IRGS4715D

IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C E C VCE(ON) typ. = 1.7V @ IC = 8A E G G G C E IRGS4715DPbF  Applications IRGB4715DPbF  n-channel D2‐Pak  TO‐220AB  • Industrial Motor Drive • UPS G C E • Solar Inverters Ga

5.1. irgs4b60kd1.pdf Size:442K _igbt

IRGS4715D
IRGS4715D

PD - 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated

5.2. irgs4610d.pdf Size:428K _igbt

IRGS4715D
IRGS4715D

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100°C E E E C G G G G tsc > 5µs, Tjmax = 175°C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter • Appliance Drives • Inverters •

 5.3. irgs4062d.pdf Size:460K _igbt

IRGS4715D
IRGS4715D

PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 µS short circuit SOA G • Square RBSOA tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated cur

5.4. irgs4b60k.pdf Size:299K _igbt

IRGS4715D
IRGS4715D

PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 6.8A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G • Maximum Junction Temperature rated at 175°C. tsc > 10µs, TJ=150°C E VCE(on) typ. = 2.1V Benefits

 5.5. irgs4607d.pdf Size:858K _igbt

IRGS4715D
IRGS4715D

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E E E G C C tSC 5µs, TJ(max) = 175°C G G G E IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E • Industrial Motor Drive

5.6. irgs4056d.pdf Size:404K _igbt

IRGS4715D
IRGS4715D

PD - 96197 IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 12A, TC = 100°C • 5 µS short circuit SOA • Square RBSOA G tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated current (ILM) •

5.7. irgs4620d.pdf Size:901K _igbt

IRGS4715D
IRGS4715D

 IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 20A, TC =100°C E E E E C G C C C G tSC ≥ 5µs, TJ(max) = 175°C G G G E IRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channel App

5.8. irgs4640d.pdf Size:809K _igbt

IRGS4715D
IRGS4715D

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100°C E E E E tSC ≥ 5µs, TJ(max) = 175°C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

5.9. irgs4045d.pdf Size:332K _igbt

IRGS4715D
IRGS4715D

IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE C C IC  6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C E G G D2-Pak VCE(on) typ.  1.7V E IRGS4045DPbF n-channel Applications G C E  Appliance Motor Drive Gate Colletor Emitter  Inverters  SMPS  Features Benefits High efficiency in a wide range of applications and

5.10. irgs4064d.pdf Size:293K _igbt

IRGS4715D
IRGS4715D

PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 10A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5μs SCSOA E • Square RBSOA VCE(on) typ. = 1.6V • 100% of The Parts Tested for (ILM) n-channel •

5.11. irgs4615d.pdf Size:336K _igbt

IRGS4715D
IRGS4715D

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C IC = 15A, TC = 100°C E E C G G tsc > 5µs, Tjmax = 175°C G E VCE(on) typ. = 1.55V @ 8A TO-220AB D2-Pak n-channel IRGB4615DPbF IRGS4615DPbF GCE Gate Collector Emitter Applications • Appliance Drives • Inverters • UPS → Features Benefits Low VCE(

5.12. irgs4630d.pdf Size:1268K _igbt

IRGS4715D
IRGS4715D

 IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 30A, TC =100°C E E E G E C tSC ≥ 5µs, TJ(max) = 175°C C C C G G G G E IRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl

5.13. auirgs4062d1.pdf Size:415K _igbt_a

IRGS4715D
IRGS4715D

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

Другие IGBT... IRGB4615D , IRGS4615D , 2E715A , 2E715B , NTE3310 , KE703A , IKD06N60RA , IRGB4715D , 10N40F1D , IRGS4064D , MG1215H-XBN2MM , IKP15N65F5 , IKP15N65H5 , MMG15H120XB6TN , STGD3NC120H , RJP6016JPE , RJH60A85RDPE .

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Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 


 

 

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