IKP15N65F5 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IKP15N65F5

Маркировка: K15F655

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 105

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.6

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 30

Максимальная температура перехода (Tj): 175

Время нарастания: 7

Емкость коллектора (Cc), pf: 24

Корпус: TO220

Аналог (замена) для IKP15N65F5

IKP15N65F5 Datasheet (PDF)

1.1. ikp15n65f5.pdf Size:2447K _igbt_a

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKP15N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP15N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti par

2.1. ikp15n65h5.pdf Size:2448K _igbt_a

IGBT High speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1 fast and soft anti parallel diode IKP15N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP15N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1 fast and soft anti parallel diode C

 3.1. ikp15n60trev2 2g[1].pdf Size:454K _infineon

IKP15N60T TrenchStop� Series q Low Loss DuoPack : IGBT in TrenchStop� and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5�s G E � Designed for : - Frequency Converters - Uninterrupted Power Supply � TrenchStop� and Fieldstop technology for

3.2. ikp15n60t.pdf Size:572K _igbt_a

IKP15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G  Designed for : E - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™

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