IKP15N65F5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKP15N65F5
Тип транзистора: IGBT + Diode
Маркировка: K15F655
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 105 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 4.8 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 7 nS
Coesⓘ - Выходная емкость, типовая: 24 pF
Qg ⓘ - Общий заряд затвора, typ: 38 nC
Тип корпуса: TO220
Аналог (замена) для IKP15N65F5
IKP15N65F5 Datasheet (PDF)
ikp15n65f5.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP15N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP15N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal
ikp15n65h5.pdf

IGBTHigh speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1fast and soft antiparallel diodeIKP15N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP15N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1fast and soft antiparallel diodeC
ikp15n60t.pdf

IKP15N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply
ikp15n60trev2 2g.pdf

IKP15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fiel
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FF200R06KE3 | YGP15N65T2
History: FF200R06KE3 | YGP15N65T2



Список транзисторов
Обновления
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