RJP6016JPE - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: RJP6016JPE

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 112

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.7

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 40

Максимальная температура перехода (Tj): 150

Время нарастания: 12

Емкость коллектора (Cc), pf: 55

Корпус: TO263

Аналог (замена) для RJP6016JPE

RJP6016JPE Datasheet (PDF)

1.1. rjp6016jpe.pdf Size:91K _igbt

 Preliminary Datasheet RJP6016JPE R07DS0878EJ0100 600 V - 40 A- N Channel IGBT Rev.1.00 High Speed Power Switching Sep 19, 2012 Features  For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE(sat) = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )

5.1. r07ds0173ej rjp60d0dpp.pdf Size:79K _renesas

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Mar 11, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25�C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS

5.2. r07ds0204ej rjp6065dpm.pdf Size:82K _renesas

Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25�C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PF

 5.3. r07ds0088ej rjp60d0dpm.pdf Size:75K _renesas

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25�C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Pack

5.4. r07ds0172ej rjp60d0dpe.pdf Size:77K _renesas

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25�C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Pac

 5.5. r07ds0585ej rjp60f0dpm.pdf Size:80K _renesas

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25�C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate

5.6. r07ds0166ej rjp60d0dpk.pdf Size:78K _renesas

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jul 13, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25�C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Pac

5.7. r07ds0540ej rjp60f0dpe.pdf Size:81K _renesas

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25�C) ? Trench gate and thin wafer technology ? High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ?, Ta = 25�C, induct

5.8. rej03g1863 rjp6085dpnds.pdf Size:115K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.9. r07ds0586ej rjp60f4dpm.pdf Size:79K _renesas

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100 600 V - 30 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25�C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate

5.10. r07ds0587ej rjp60f5dpm.pdf Size:81K _renesas

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100 600 V - 40 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25�C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate G

5.11. rej03g1862 rjp6085dpkds.pdf Size:118K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.12. rjp60v0dpm.pdf Size:82K _igbt

 Preliminary Datasheet RJP60V0DPM R07DS0669EJ0100 600V - 22A - IGBT Rev.1.00 Application: Inverter Feb 07, 2012 Features  High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Short circuit withstand time (6 s typ.)  Trench gate and thin wafer technology (G6H series) Outline RENES

5.13. rjp6085dpn-00.pdf Size:112K _igbt

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.14. rjp6085dpk.pdf Size:115K _igbt

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.15. rjp6065dpm.pdf Size:79K _igbt

 Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A (Package

5.16. rjp60f5dpk.pdf Size:77K _igbt

 Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100 600V - 40A - IGBT Rev.1.00 High Speed Power Switching May 31, 2012 Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Pack

5.17. rjp60f0dpe.pdf Size:79K _igbt

 Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

5.18. rjp60d0dpe.pdf Size:74K _igbt

 Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Outli

5.19. rjp60f0dpm.pdf Size:77K _igbt

 Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C

5.20. rjp60d0dpp-m0.pdf Size:76K _igbt

 Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Mar 11, 2011 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Ou

5.21. rjp60d0dpm.pdf Size:72K _igbt

 Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 16, 2010 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Outlin

5.22. rjp60d0dpk.pdf Size:75K _igbt

 Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jul 13, 2011 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Outli

5.23. rjp60f4dpm.pdf Size:76K _igbt

 Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100 600 V - 30 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C

5.24. rjp60f5dpm.pdf Size:75K _igbt

 Preliminary Datasheet RJP60F5DPM R07DS0587EJ0200 600V - 40A - IGBT Rev.2.00 High Speed Power Switching May 31, 2012 Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25�

Другие IGBT... IRGB4715D , IRGS4715D , IRGS4064D , MG1215H-XBN2MM , IKP15N65F5 , IKP15N65H5 , MMG15H120XB6TN , STGD3NC120H , HGTG30N60A4 , RJH60A85RDPE , RJH60V3BDPE , IRG7PH28UD1 , NGD18N45 , NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G , STGB10H60DF .