Справочник IGBT. NGD18N45CLBT4G

 

NGD18N45CLBT4G Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGD18N45CLBT4G
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 115 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 450 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 18 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 18 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.07 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 72 pF
   Тип корпуса: TO252
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NGD18N45CLBT4G Datasheet (PDF)

 ..1. Size:132K  onsemi
 ngd18n45clbt4g.pdf pdf_icon

NGD18N45CLBT4G

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ

 6.1. Size:132K  onsemi
 ngd18n45.pdf pdf_icon

NGD18N45CLBT4G

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ

 7.1. Size:126K  1
 ngd18n40clb.pdf pdf_icon

NGD18N45CLBT4G

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

 7.2. Size:126K  onsemi
 ngd18n40a.pdf pdf_icon

NGD18N45CLBT4G

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

ПОКАЗАТЬ ЕЩЁ

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History: IQGB300N120I4 | IXBF12N300 | IRG4PC40FDPBF | JNG20T60PS | IGB20N65S5 | NGD15N41A | 2MBI300NB-060

 

 
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