STGB15H60DF - аналоги и описание IGBT

STGB15H60DF, STGF15H60DF, STGP15H60DF Trench gate field-stop IGBT, H series 600 V, 15 A high speed Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 Safe paralleling D PAK Low thermal resistance TAB Short-circuit rated Ultrafast soft recovery antiparallel diode Applications 3 3 2 2 1 1 Motor cont

STGB15H60DF, STGF15H60DF, STGP15H60DF Datasheet Trench gate field-stop IGBT, H series 600 V, 14 A high speed Features TAB High speed switching 3 1 Tight parameters distribution 2 D PAK 3 2 1 Safe paralleling TO-220FP TAB Low thermal resistance Short-circuit rated 3 2 Ultrafast soft recovery antiparallel diode 1 TO-220 C(2, TAB) Applications Mo

STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D PAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) @ I = 15 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat) 3 Low thermal resistance 1 Soft and ver

STGB19NC60HDT4, STGF19NC60HD, STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with ultrafast diode Datasheet - production data Features TAB Low on-voltage drop (VCE(sat)) Very soft ultrafast recovery anti-parallel diode 3 3 1 2 1 Applications D PAK TO-220FP TAB High frequency motor drives SMPS and PFC in both hard switch and resonant topologies 3 2 3

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

STGB10NB40LZ N-CHANNEL CLAMPED 20A - D PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB10NB40LZ CLAMPED

STGB19NC60HDT4, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode 3 3 1 2 1 Applications D PAK TO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies 3 3 2 2 1 1 Description TO-247

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction RES IES 3 1 susceptibility) D2 PAK 3 Short-circuit withstand time 10 s 2 1 IGBT co-packaged with ultrafast free- TO-220FP TAB wheeling diode Applications

STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features Low on-voltage drop (VCE(sat)) High current capability TAB TAB Applications 3 Light dimmer 3 1 2 1 Static relays TO-220 D2PAK Motor drive Description This IGBT utilizes the advanced PowerMESH process featuring extremely low on-state voltage Figure 1. Internal schematic diagram drop in low-fr

STGB19NC60HD, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A - 600 V - very fast IGBT Features Low on-voltage drop (VCE(sat)) Very soft ultra fast recovery anti-parallel diode 3 3 2 1 1 D PAK Applications TO-220 High frequency motor controls SMPS and PFC in both hard switch and resonant topologies 3 3 2 2 1 1 Description TO-247 TO-220FP This IGBT utilize

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

STGB19NC60W STGP19NC60W, STGW19NC60W 19 A - 600 V - ultra fast IGBT Features High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) 3 1 3 2 Applications 1 D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 3 2 resonant topologies 1 TO-220 Description This IGBT utilizes the advanc

STGP10N60L N-CHANNEL 10A - 600V - TO-220 LOGIC LEVEL IGBT TYPE VCES VCE(sat) IC STGP10N60L 600 V

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

STGB19NC60H, STGP19NC60H STGW19NC60H 19 A - 600 V - very fast IGBT Features Low on-voltage drop (VCE(sat)) High frequency operation 3 2 1 Applications 3 TO-247 2 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220 resonant topologies 3 1 D PAK Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 14 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction res ies 3 1 susceptibility) D2 PAK 3 Very soft ultrafast recovery antiparallel diode 2 1 Short-circuit withstand time 10 s TO-220FP TAB Applications H

STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25 C @100 C STGB10NC60K 600V

STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s 3 3 IGBT co-packaged with ultra fast free-wheeling 1 2 1 diode D2PAK TO-220 Applications High frequency inverters Motor drivers Description Figure 1.

STGB19NC60KD STGF19NC60KD - STGP19NC60KD 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) 3 3 Short circuit withstand time 10 s 1 2 1 IGBT co-packaged with ultra fast free-wheeling D2PAK TO-220 diode Applications 3 2 1 High frequency inverters TO-220FP Mot

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IES susceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D PAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat) 3 Low thermal resistance 1 Soft and very

STGB14NC60KD STGF14NC60KD, STGP14NC60KD 14 A, 600 V - short-circuit rugged IGBT Features TAB TAB 2 Short circuit withstand time 10 s. Low on-voltage drop (VCE(sat)) 3 Low Cres / Cies ratio (no cross conduction 3 1 2 1 susceptibility) D PAK TO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode 3 2 1 App

STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH IGBT General features IC VCE(sat) Type VCES (Max)@ 25 C @100 C STGB14NC60K 600V

STGB19NC60KD STGF19NC60KD - STGP19NC60KD 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) 3 3 Short circuit withstand time 10 s 1 2 1 IGBT co-packaged with ultra fast free-wheeling D2PAK TO-220 diode Applications 3 2 1 High frequency inverters TO-220FP Mot

STGx19NC60HD STGWA19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode 3 1 3 2 1 D PAK Applications TO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies 3 3 2 2 1 1 Description TO-220FP TO-247 This IGBT utilize

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

STGB14NC60KD STGF14NC60KD, STGP14NC60KD 14 A, 600 V - short-circuit rugged IGBT Features TAB TAB 2 Short circuit withstand time 10 s. Low on-voltage drop (VCE(sat)) 3 Low Cres / Cies ratio (no cross conduction 3 1 2 1 susceptibility) D PAK TO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode 3 2 1 App

STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features Low on voltage drop (VCESAT) Short-circuit withstand time 10 s TAB Applications High frequency motor controls 3 1 SMPS and PFC in both hard switch and resonant topologies D PAK Motor drives Description This device utilizes the advanced Power MESH Figure 1. Internal schematic diagram process r

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

STGB19NC60H, STGP19NC60H STGW19NC60H 19 A - 600 V - very fast IGBT Features Low on-voltage drop (VCE(sat)) High frequency operation 3 2 1 Applications 3 TO-247 2 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220 resonant topologies 3 1 D PAK Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STGB19NC60W STGP19NC60W, STGW19NC60W 19 A - 600 V - ultra fast IGBT Features High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) 3 1 3 2 Applications 1 D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 3 2 resonant topologies 1 TO-220 Description This IGBT utilizes the advanc

STGP10NB60S STGP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D PAK PowerMESH IGBT Table 1 General Features Figure 1 Package TYPE VCES VCE(sat) (Max) IC @25 C @100 C STGP10NB60S 600 V

STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 Safe paralleling D PAK Low thermal resistance TAB Short-circuit rated Ultrafast soft recovery antiparallel diode Applications 3 3 2 2 1 1 Motor cont

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB

STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s 3 3 IGBT co-packaged with ultra fast free-wheeling 1 2 1 diode D2PAK TO-220 Applications High frequency inverters Motor drivers Description Figure 1.

STGB19NC60S STGP19NC60S 20 A, 600 V fast IGBT Features Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching TAB Optimized performance for medium operating frequencies. 3 3 1 2 1 Application D2PAK TO-220 Medium frequency motor drives Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent tr