OM6516SC - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: OM6516SC
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 125 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 25 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 4 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 200 nS
Coesⓘ - Выходная емкость, типовая: 160 pF
Тип корпуса: TO258AA
OM6516SC Datasheet (PDF)
om6516sc.pdf
OM6516SCOM6520SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened
om6510sc.pdf
OM6510SCOM6511SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE500 Volt, 20 And 30 Amp, N-Channel IGBT With a Soft Recovery DiodeIn A Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Free Wheeling Diode Availab
om6517sa.pdf
OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev
om6517sw.pdf
OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev
om6514ss.pdf
OM6514SSOM6515SSINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available With Free Wheeling Diodes Available
om6512sc.pdf
OM6512SCOM6513SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available With Free Wheeling Diode Available Screened To MIL-S
om6518ss.pdf
OM6518SSOM6519SSINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diodes Availa
Другие IGBT... STGP10H60DF , STGP15H60DF , IGP20N65F5 , IGP20N65H5 , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , IHW20N135R5 , OM6517SA , OM6520SC , STGD19N40LZ , KGF15N120NDS , IRGB4620D , IRGP4620D , IRGS4620D , MMG25H120X6TN .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2