OM6516SC Даташит. Аналоги. Параметры и характеристики.
Наименование: OM6516SC
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 125 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 25 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 4 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 200 nS
Coesⓘ - Выходная емкость, типовая: 160 pF
Тип корпуса: TO258AA
- подбор IGBT транзистора по параметрам
OM6516SC Datasheet (PDF)
om6516sc.pdf

OM6516SCOM6520SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened
om6510sc.pdf

OM6510SCOM6511SCINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-258AA PACKAGE500 Volt, 20 And 30 Amp, N-Channel IGBT With a Soft Recovery DiodeIn A Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Free Wheeling Diode Availab
om6517sa.pdf

OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev
om6517sw.pdf

OM6517SAOM6526SAINSULATED GATE BIPOLAR TRANSISTOR(IGBT) IN A HERMETIC TO-254AA PACKAGE1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal PackageFEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Lev
Другие IGBT... STGP10H60DF , STGP15H60DF , IGP20N65F5 , IGP20N65H5 , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , CRG60T60AN3H , OM6517SA , OM6520SC , STGD19N40LZ , KGF15N120NDS , IRGB4620D , IRGP4620D , IRGS4620D , MMG25H120X6TN .
History: 2MBI150NC-120 | DM2G150SH6NE | MMG200D120B6UC | CM50YE13-12H | CM100RL-24NF | IXGH50N60B4 | CM600DXL-24S
History: 2MBI150NC-120 | DM2G150SH6NE | MMG200D120B6UC | CM50YE13-12H | CM100RL-24NF | IXGH50N60B4 | CM600DXL-24S



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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