Справочник IGBT. HGTD3N60A4S

 

HGTD3N60A4S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HGTD3N60A4S
   Тип транзистора: IGBT
   Маркировка: 3N60A4
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 17 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 11 nS
   Qgⓘ - Общий заряд затвора, typ: 21 nC
   Тип корпуса: TO252

 Аналог (замена) для HGTD3N60A4S

 

 

HGTD3N60A4S Datasheet (PDF)

 ..2. Size:257K  onsemi
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HGTD3N60A4S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:265K  1
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HGTD3N60C3S, HGTP3N60C3Data Sheet December 20016A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1

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HGTD3N60A4S

 6.4. Size:345K  harris semi
hgtd3n60.pdf

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HGTD3N60C3,S E M I C O N D U C T O RHGTD3N60C3SJune 1996 6A, 600V, UFS Series N-Channel IGBTFeatures PackagingJEDEC TO-251AA 6A, 600V at TC = +25oC 600V Switching SOA CapabilityEMITTERCOLLECTOR Typical Fall Time - 130ns at TJ = +150oCGATE Short Circuit Rating Low Conduction LossCOLLECTOR(FLANGE)DescriptionThe HGTD3N60C3 and HGTD3N60C3S are MOS ga

Другие IGBT... HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , IRG7R313U , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S , HGT5A27N120BN , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 .

 

 
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