Справочник IGBT. KGT15N135NDH

 

KGT15N135NDH - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: KGT15N135NDH
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1350 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 60 pF
   Qgⓘ - Общий заряд затвора, typ: 90 nC
   Тип корпуса: TO3P

 Аналог (замена) для KGT15N135NDH

 

 

KGT15N135NDH Datasheet (PDF)

 ..1. Size:1600K  kec
 kgt15n135ndh.pdf

KGT15N135NDH KGT15N135NDH

SEMICONDUCTORKGT15N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc. _+_+_+_+FEATURES _+High speed switching _+_+High system efficiency_+_+Soft current turn-off waveforms_

 5.1. Size:1558K  kec
 kgt15n135kdh.pdf

KGT15N135NDH KGT15N135NDH

SEMICONDUCTORKGT15N135KDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c

 7.1. Size:100K  kec
 kgt15n120nda.pdf

KGT15N135NDH KGT15N135NDH

SEMICONDUCTORKGT15N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc. _A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20+FEATURES _d +1.00 0.20High spee

 7.2. Size:1466K  kec
 kgt15n120nds.pdf

KGT15N135NDH KGT15N135NDH

SEMICONDUCTORKGT15N120NDSTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

 7.3. Size:1565K  kec
 kgt15n120kda.pdf

KGT15N135NDH KGT15N135NDH

SEMICONDUCTORKGT15N120KDATECHNICAL DATAGeneral DescriptionKEC NPT Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10usExtremely en

 7.4. Size:1475K  kec
 kgt15n120ndh.pdf

KGT15N135NDH KGT15N135NDH

SEMICONDUCTORKGT15N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

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