STGB30H60DF - аналоги, параметры транзистора - Справочник транзисторов

STGB30H60DF даташит

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STGB30H60DF STGP30H60DF 30 A, 600 V field stop trench gate IGBT with Ultrafast diode Target specification Features Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3 2 1 1 Ultrafast soft recovery antiparallel diode TO-220 Applications D PAK Motor control Description

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STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 D PAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 I

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STGB30H60DFB, STGP30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C TAB TAB High speed switching series Minimized tail current 3 Low saturation voltage VCE(sat) = 1.55 V (typ.) @ IC = 30 A 1 3 2 D PAK TO-220 2 Tight parameter distribution 1 Safe paralleling Positive V

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STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Designed for soft commutation only Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 1 3 VCE(sat) = 1.55 V (typ.) @ IC = 30 A 2 D2PAK 1 Low VF soft recovery co-packaged diode T