NGTB20N120IHSWG - аналоги и описание IGBT

 

NGTB20N120IHSWG - аналоги, основные параметры, даташиты

Наименование: NGTB20N120IHSWG

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 156 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃

Coesⓘ - Выходная емкость, типовая: 90 pF

Тип корпуса: TO247

 Аналог (замена) для NGTB20N120IHSWG

- подбор ⓘ IGBT транзистора по параметрам

 

NGTB20N120IHSWG даташит

 0.1. Size:182K  onsemi
 ngtb20n120ihswg.pdf pdf_icon

NGTB20N120IHSWG

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 1.1. Size:182K  onsemi
 ngtb20n120ihs.pdf pdf_icon

NGTB20N120IHSWG

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N120IHSWG

NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.2. Size:109K  onsemi
 ngtb20n120ih.pdf pdf_icon

NGTB20N120IHSWG

NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http //onsemi.com Features

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , TGAN20N135FD , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , NGTB30N60FWG , NGTG30N60FLWG , NGTG30N60FWG , STGB20V60DF .

History: NGTB45N60S1WG | SRE30N065FSUDG | STGB19NC60W | STGWT40H65DFB | VS-GB50LA120UX | XP035PJE120AT1B2

 

 

 

 

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