Справочник IGBT. NGTB20N120IHSWG

 

NGTB20N120IHSWG Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB20N120IHSWG
   Тип транзистора: IGBT + Diode
   Маркировка: 20N120IHS
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 156 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   Coesⓘ - Выходная емкость, типовая: 90 pF
   Qg ⓘ - Общий заряд затвора, typ: 155 nC
   Тип корпуса: TO247
 

 Аналог (замена) для NGTB20N120IHSWG

   - подбор ⓘ IGBT транзистора по параметрам

 

NGTB20N120IHSWG Datasheet (PDF)

 0.1. Size:182K  onsemi
 ngtb20n120ihswg.pdf pdf_icon

NGTB20N120IHSWG

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 1.1. Size:182K  onsemi
 ngtb20n120ihs.pdf pdf_icon

NGTB20N120IHSWG

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N120IHSWG

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.2. Size:109K  onsemi
 ngtb20n120ih.pdf pdf_icon

NGTB20N120IHSWG

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: SKM75GAL063D | IKW50N65F5A | F3L400R07PE4_B26 | SKM400GA123D | F3L300R12ME4_B22 | STGP30H60DF | MMG200DR060DE

 

 
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