IRG7PK35UD1 - аналоги и описание IGBT

IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1400V C IC = 20A, TC =100 C TJ(max) = 150 C G E E C G C G VCE(ON) typ. = 2.0V @ IC = 20A E IRG7PK35UD1PbF IRG7PK35UD1 EPbF n-channel TO 247AC TO 247AD Applications Induction heating G C E Microwave ovens Gate Colle

PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 60A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VC

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C I NOMINAL = 20A Square RBSOA 100% of the parts tested for ILM G TJ(max) = 175 C Positive VCE (ON) temperature co-efficient Tight parameter distribution E VCE(on)

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT Technology VCES = 1200V Low Switching Losses Square RBSOA IC = 25A, TC = 100 C Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity G TJ(max) = 150 C 100% of the Parts Tested for ILM

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100 C tSC 10 s, TJ(max) = 150 C G C E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channel IRG7PH50K10DPbF IRG7PH50K10D EPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter So

IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS C VCES = 1200V Features Low VCE (ON) trench IGBT technology IC = 15A, TC = 100 C Low switching losses TJ(MAX) = 150 C G Square RBSOA Ultra-low VF diode VCE(ON) typ. = 1.95V E 1300Vpk repetitiv

PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 50A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight paramete

PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T

PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE

IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 35A, TC = 100 C Low switching losses G TJ(MAX) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(ON) typ. = 1.9V@ IC = 20A Positive VCE (ON) temperature co-efficient n-channel Tight par

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

PD - 96409 IRG7P313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A l Optimized for Sustain and Energy Recovery 1.35 V circuits in PDP applications IRP max @ TC= 25 C 200 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Le

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod

PD - 97723 PDP TRENCH IGBT IRG7PC28UPbF Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l

PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 1200V Low switching losses 10 S short circuit SOA IC = 16A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G tSC 10 s, TJ(max) = 150 C Positive VCE (ON) Temperature co-efficient Ultra

PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C Low VCE (ON) Trench IGBT Technology VCES = 1200V Low Switching Losses Maximum Junction Temperature 175 C IC = 23A, TC = 100 C 10 S short Circuit SOA Square RBSOA G tSC 10 s, TJ(max) =175 C 100% of the parts tested for ILM E Positive VCE (ON) Temperature Co-Efficient VC

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100 C E tSC 10 s, TJ(max) = 150 C E G C C G G E VCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbF IRG7PH37K10D EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collecto

PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T

PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 60A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VC

IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100 C tSC 10 s, TJ(max) = 150 C G E C E G C G E VCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbF IRG7PH44K10D EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector E

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C I NOMINAL = 20A Square RBSOA 100% of the parts tested for ILM G TJ(max) = 175 C Positive VCE (ON) temperature co-efficient Tight parameter distribution E VCE(on)

IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parame

IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parame

IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C Ultra-low VF Diode TJ(max) = 150 C 1300Vpk repetitive transient capacity G 100% of the parts tested for ILM VCE

PD-96357 PDP TRENCH IGBT IRG7PA19UPbF Features Key Parameters VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.49 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 300 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lea

PD - 96305A IRG7PH46UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH46U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 75A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VC

PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 1200V Low VCE (ON) Trench IGBT Technology Low Switching Losses IC(Nominal) = 75A Maximum Junction Temperature 175 C 10 S short Circuit SOA G tSC 10 s, TJ(max) =175 C Square RBSOA 100% of The Parts Tested for ILM E VCE(on) typ. = 2.0V Positive VCE (ON) Temperatur

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 45A, TC = 100 C Low switching losses G Square RBSOA TJ(MAX) = 150 C 100% of the parts tested for ILM E VCE(ON) typ. = 1.7V @ IC = 30A Positive VCE (ON) temperature co-efficient n-channel Ultra

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod

PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE

IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100 C tSC 10 s, TJ(max) = 150 C E G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel IRG7PSH54K10DPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VC

IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF Diode G 1300Vpk repetitive transient capacity TJ(max) = 150 C 100% of the parts tested for IL