Справочник IGBT. NGTG30N60FLWG

 

NGTG30N60FLWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NGTG30N60FLWG
   Тип транзистора: IGBT
   Маркировка: G30N60FL
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 31 nS
   Coesⓘ - Выходная емкость, типовая: 130 pF
   Qgⓘ - Общий заряд затвора, typ: 170 nC
   Тип корпуса: TO247

 Аналог (замена) для NGTG30N60FLWG

 

 

NGTG30N60FLWG Datasheet (PDF)

 ..1. Size:173K  onsemi
 ngtg30n60flwg.pdf

NGTG30N60FLWG NGTG30N60FLWG

NGTG30N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

 4.1. Size:169K  onsemi
 ngtg30n60fwg.pdf

NGTG30N60FLWG NGTG30N60FLWG

NGTG30N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation30 A, 600 V

 9.1. Size:84K  onsemi
 ngtg35n65fl2.pdf

NGTG30N60FLWG NGTG30N60FLWG

NGTG35N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Eff

 9.2. Size:82K  onsemi
 ngtg35n65fl2wg.pdf

NGTG30N60FLWG NGTG30N60FLWG

NGTG35N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.www.onsemi.comFeatures Extremely Effici

Другие IGBT... NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , NGTB30N60FWG , GT30J127 , NGTG30N60FWG , STGB20V60DF , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F .

 

 
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