STGB20V60F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: STGB20V60F
Тип транзистора: IGBT
Маркировка: GB20V60F
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 167 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.15 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 10 nS
Coesⓘ - Выходная емкость, типовая: 110 pF
Qgⓘ - Общий заряд затвора, typ: 116 nC
Тип корпуса: TO263
Аналог (замена) для STGB20V60F
STGB20V60F Datasheet (PDF)
stgb20v60f.pdf
STGB20V60F, STGP20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Very high speed switching seriesTABTAB Tail-less switching off Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A33 Tight parameters distribution211 Safe parallelingD2PAKTO-
stgb20v60df.pdf
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete
stgb20m65df2.pdf
STGB20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeaturesTAB High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution23 Safer paralleling1 Low thermal resistanceDPAK Soft and very fast recovery antiparallel diodeC(2, TAB)Applications Motor control UPSG(1)
stgb20nb32lz stgb20nb32lz-1 .pdf
STGB20NB32LZSTGB20NB32LZ-1N-CHANNEL CLAMPED 20A - D2PAK/I2PAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB20NB32LZ CLAMPED
stgb20nc60v stgp20nc60v stgw20nc60v.pdf
STGB20NC60V, STGP20NC60V, STGW20NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability3 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor driversDPAK HF, SMPS and PFC in both hard
stgb20h60df.pdf
STGB20H60DF, STGF20H60DF, STGP20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution3 Safe paralleling32211 Low thermal resistanceTO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diodeTABApplications31 Motor contr
stgb20nb32lz stgb20nb32lz-1.pdf
STGB20NB32LZSTGB20NB32LZ-1N-CHANNEL CLAMPED 20A - D2PAK/I2PAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB20NB32LZ CLAMPED
stgb20nb41lz.pdf
STGB20NB41LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB20NB41LZ CLAMPED
stgb20nc60v.pdf
STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi
stgb20h65dfb2.pdf
STGB20H65DFB2DatasheetTrench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a DPAK packageFeaturesTAB Maximum junction temperature : TJ = 175 C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A23 Very fast and soft recovery co-packaged diode1 Minimized tail currentDPAK Tight parameter distribution Low thermal resistanceC(2, TAB)
stgb20nb37lz.pdf
STGB20NB37LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB20NB37LZ CLAMPED
Другие IGBT... AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , NGTB30N60FWG , NGTG30N60FLWG , NGTG30N60FWG , STGB20V60DF , IRG4PC50U , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F , STGWT20V60DF , STGWT20V60F , F3L50R06W1E3_B11 .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2