Справочник IGBT. IRG8P25N120KD

 

IRG8P25N120KD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRG8P25N120KD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 20 nS
   Coesⓘ - Выходная емкость, типовая: 90 pF
   Qgⓘ - Общий заряд затвора, typ: 90 nC
   Тип корпуса: TO247

 Аналог (замена) для IRG8P25N120KD

 

 

IRG8P25N120KD Datasheet (PDF)

 ..1. Size:654K  international rectifier
 irg8p25n120kd.pdf

IRG8P25N120KD IRG8P25N120KD

IRG8P25N120KDPbF IRG8P25N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E G C C G G EVCE(ON) typ. = 1.7V @ IC = 15A IRG8P25N120KDPbFIRG8P25N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector

 9.1. Size:640K  international rectifier
 irg8p15n120kd.pdf

IRG8P25N120KD IRG8P25N120KD

IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 15A, TC =100C E tSC 10s, TJ(max) = 150C E GC G G C EVCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbFIRG8P15N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector E

 9.2. Size:659K  international rectifier
 irg8p08n120kd.pdf

IRG8P25N120KD IRG8P25N120KD

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 8A, TC =100C tSC 10s, TJ(max) = 150C E C GE C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G ETO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Ind

 9.3. Size:615K  international rectifier
 irg8p50n120kd.pdf

IRG8P25N120KD IRG8P25N120KD

IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 50A, TC =100C tSC 10s, TJ(max) = 150C C E G E G C G EVCE(ON) typ. = 1.7V @ IC = 35A IRG8P50N120KDPbFIRG8P50N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector Em

 9.4. Size:553K  international rectifier
 irg8p40n120kd.pdf

IRG8P25N120KD IRG8P25N120KD

IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 40A, TC =100C tSC 10s, TJ(max) = 150C E E GC G C G EVCE(ON) typ. = 1.7V @ IC = 25A IRG8P40N120KDPbFIRG8P40N120KDEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector E

 9.5. Size:699K  international rectifier
 irg8p60n120kd.pdf

IRG8P25N120KD IRG8P25N120KD

IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 60A, TC =100C tSC 10s, TJ(max) = 150C E GE C G G C EVCE(ON) typ. = 1.7V @ IC = 40A IRG8P60N120KDPbFIRG8P60N120KDEPbFn-channelTO247ACTO247ADApplications Industrial Motor Drive G C E UPS Gate

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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