AUIRGP66524D0 - аналоги и описание IGBT

AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V INOMINAL = 24A E Tsc 6 s, TJ(MAX) = 175 C G C E G C G E VCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channel AUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector E

AUIRGP65G40D0 AUTOMOTIVE GRADE AUIRGF65G40D0 ULTRAFAST IGBT WITH CooliRIGBT ULTRAFAST SOFT RECOVERY DIODE Features C Designed And Qualified for Automotive Applications VCES = 600V Ultra Fast Switching IGBT 70-200kHz VCE(on) typ. = 1.8V Extremely Low Switching Losses Maximum Junction Temperature 175 C G IC@TC=100 C = 41A Short Circuit Rated 5 S E

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the

PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 24A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tSC 5 s, TJ(max) = 175 C 5 s SCSOA Square RBSOA E VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co

PD - 97726C AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 160A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses 6 s SCSOA G tSC 6 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(on) typ. = 1.70V Positive VCE (on) Tempera

PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E C INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100 C Features Low VCE (on) Trench IGBT Technology G tSC 5 s, TJ(max) = 175 C Low Switching Losses 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V

AUIRGP50B60PD1 AUTOMOTIVE GRADE AUIRGP50B60PD1-E WARP2 SERIES IGBT WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Applications Automotive HEV and EV Equivalent MOSFET PFC and ZVS SMPS Circuits G Parameters Features RCE(on) typ. = 61m E Low VCE(ON) NPT Technology, Positive Temperature ID (FET equivalent) = 50A Coefficie

PD - 97675 AUTOMOTIVE GRADE AUIRGP35B60PD WARP2 SERIES IGBT WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE VCE(on) typ. = 1.85V Features @ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Equivalent MOSFET Lower Parasitic Capacitances G Minimal Tail Current Parameters HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode RCE(on)

AUIRGP4062D1 AUTOMOTIVE GRADE AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. E VCE(on) ty

PD - 97619 AUTOMOTIVE GRADE AUIRGP35B60PD-E WARP2 SERIES IGBT WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE VCE(on) typ. = 1.85V Features @ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Equivalent MOSFET Lower Parasitic Capacitances G Parameters Minimal Tail Current RCE(on) typ. = 84m HEXFRED Ultra Fast Soft-Recov

AUIRGP4066D1 AUTOMOTIVE GRADE AUIRGP4066D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features IC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching losses G tSC 5 s, TJ(max) = 175 C Maximum Junction temperature 175 C 5 S short circuit SOA E VCE(on) typ. = 1.70V Square RBSOA n-channel 100

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the

AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100 C 6 s SCSOA G tsc 6 s, TJ(MAX) = 175 C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V