IKW40N65WR5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKW40N65WR5
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 230 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 29 nS
Coesⓘ - Выходная емкость, типовая: 45 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IKW40N65WR5 Datasheet (PDF)
ikw40n65wr5.pdf

Reverse Conduction SeriesReverse conducting IGBT with monolithic body diodeIKW40N65WR5Data sheetInductrial Power ControlIKW40N65WR5Reverse Conduction SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior
aikw40n65df5.pdf

AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f
ikw40n65f5a.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW40N65F5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW40N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar
aikw40n65dh5.pdf

AIKW40N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE
Другие IGBT... NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , NGTG50N60FWG , KGF50N60KDA , IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , MBQ50T65FDSC , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP , MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK , AUIRGB4062D1 .
History: CRGMF50T120FSC | APT13GP120KG | TGAN20N135FD | IHW20T120 | SGT10T60SD1S | IXGK80N60A | GT30J127
History: CRGMF50T120FSC | APT13GP120KG | TGAN20N135FD | IHW20T120 | SGT10T60SD1S | IXGK80N60A | GT30J127



Список транзисторов
Обновления
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