Справочник IGBT. RJH1CV5DPK

 

RJH1CV5DPK - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: RJH1CV5DPK

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 245

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30

Максимальный постоянный ток коллектора |Ic| @25℃, A: 50

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.8

Максимальная температура перехода (Tj), ℃: 150

Время нарастания типовое (tr), nS: 24

Емкость коллектора типовая (Cc), pf: 70

Тип корпуса: TO3P

Аналог (замена) для RJH1CV5DPK

 

 

RJH1CV5DPK Datasheet (PDF)

 ..1. Size:129K  renesas
rjh1cv5dpk.pdf

RJH1CV5DPK
RJH1CV5DPK

Preliminary Datasheet RJH1CV5DPK R07DS0746EJ03001200V - 25A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wafer

 5.1. Size:53K  renesas
r07ds0523ej rjh1cv5dpq.pdf

RJH1CV5DPK
RJH1CV5DPK

Preliminary DatasheetRJH1CV5DPQ-E0 R07DS0523EJ03001200 V - 25 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 5.2. Size:98K  renesas
rjh1cv5dpq-e0.pdf

RJH1CV5DPK
RJH1CV5DPK

Preliminary Datasheet RJH1CV5DPQ-E0 R07DS0523EJ05001200V - 25A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wa

 8.1. Size:53K  renesas
r07ds0524ej rjh1cv6dpq.pdf

RJH1CV5DPK
RJH1CV5DPK

Preliminary DatasheetRJH1CV6DPQ-E0 R07DS0524EJ03001200 V - 30 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 8.2. Size:53K  renesas
r07ds0525ej rjh1cv7dpq.pdf

RJH1CV5DPK
RJH1CV5DPK

Preliminary DatasheetRJH1CV7DPQ-E0 R07DS0525EJ03001200 V - 35 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

 8.3. Size:98K  renesas
rjh1cv7dpq-e0.pdf

RJH1CV5DPK
RJH1CV5DPK

Preliminary Datasheet RJH1CV7DPQ-E0 R07DS0525EJ05001200V - 35A - IGBT Rev.5.00Application: Inverter May 24, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wa

 8.4. Size:127K  renesas
rjh1cv7dpk.pdf

RJH1CV5DPK
RJH1CV5DPK

Preliminary Datasheet RJH1CV7DPK R07DS0748EJ03001200V - 35A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer

 8.5. Size:98K  renesas
rjh1cv6dpq-e0.pdf

RJH1CV5DPK
RJH1CV5DPK

Preliminary Datasheet RJH1CV6DPQ-E0 R07DS0524EJ05001200V - 30A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa

 8.6. Size:127K  renesas
rjh1cv6dpk.pdf

RJH1CV5DPK
RJH1CV5DPK

Preliminary Datasheet RJH1CV6DPK R07DS0747EJ03001200V - 30A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wafer

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