RJH1CV5DPK - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: RJH1CV5DPK
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 245 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 24 nS
Coesⓘ - Выходная емкость, типовая: 70 pF
Qgⓘ - Общий заряд затвора, typ: 72 nC
Тип корпуса: TO3P
Аналог (замена) для RJH1CV5DPK
RJH1CV5DPK Datasheet (PDF)
rjh1cv5dpk.pdf
Preliminary Datasheet RJH1CV5DPK R07DS0746EJ03001200V - 25A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wafer
r07ds0523ej rjh1cv5dpq.pdf
Preliminary DatasheetRJH1CV5DPQ-E0 R07DS0523EJ03001200 V - 25 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa
rjh1cv5dpq-e0.pdf
Preliminary Datasheet RJH1CV5DPQ-E0 R07DS0523EJ05001200V - 25A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wa
rjh1cv7dpq-e0.pdf
Preliminary Datasheet RJH1CV7DPQ-E0 R07DS0525EJ05001200V - 35A - IGBT Rev.5.00Application: Inverter May 24, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wa
rjh1cv7dpk.pdf
Preliminary Datasheet RJH1CV7DPK R07DS0748EJ03001200V - 35A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer
r07ds0525ej rjh1cv7dpq.pdf
Preliminary DatasheetRJH1CV7DPQ-E0 R07DS0525EJ03001200 V - 35 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa
r07ds0524ej rjh1cv6dpq.pdf
Preliminary DatasheetRJH1CV6DPQ-E0 R07DS0524EJ03001200 V - 30 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa
rjh1cv6dpk.pdf
Preliminary Datasheet RJH1CV6DPK R07DS0747EJ03001200V - 30A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wafer
rjh1cv6dpq-e0.pdf
Preliminary Datasheet RJH1CV6DPQ-E0 R07DS0524EJ05001200V - 30A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2