AUIRGB4062D1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AUIRGB4062D1
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 246
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 59
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.77
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
Максимальная температура перехода (Tj), ℃: 175
Время нарастания типовое (tr), nS: 24
Емкость коллектора типовая (Cc), pf: 118
Общий заряд затвора (Qg), typ, nC: 51
Тип корпуса: TO220AB
Аналог (замена) для AUIRGB4062D1
AUIRGB4062D1 Datasheet (PDF)
auirgb4062d1.pdf
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AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.
auirgb4062d auirgp4062d auirgp4062d-e.pdf
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PD - 96353AUIRGB4062DAUIRGP4062DAUIRGP4062D-ECINSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 24A, TC = 100CFeatures Low VCE (on) Trench IGBT TechnologyGtSC 5s, TJ(max) = 175C Low Switching Losses 5s SCSOAE Square RBSOAVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V
auirgu4045d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PD - 97637AUTOMOTIVE GRADEAUIRGR4045DAUIRGU4045DINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT TechnologyIC = 6.0A, TC = 100C Low Switching Losses Maximum Junction temperature 175 C GVCE(on) typ. = 1.7V 5s SCSOA Square RBSOAE 100% of the parts tested for ILM n-channel
auirgdc0250.pdf
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AUTOMOTIVE GRADEAUIRGDC0250FeaturesC Low VCE (on) Planar IGBT Technology Low Switching LossesVCES = 1200V Square RBSOA 100% of The Parts Tested for ILM IC = 81A@ TC = 100C Positive VCE (on) Temperature Coefficient.G Lead-Free, RoHS CompliantVCE(on) typ. = 1.37V@ 33A Automotive Qualified *En-channelBenefits Device optimized for soft s
auirg4pc40s-e.pdf
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AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (
auirg4bc30s-s.pdf
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AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (
auirgs30b60k.pdf
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PD - 96334AUTOMOTIVE GRADEAUIRGS30B60KAUIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Low VCE(on) Non Punch Through IGBT TechnologyIC = 50A, TC=100C 10s Short Circuit Capabilityat TJ=175C Square RBSOA Gtsc > 10s, TJ=150C Positive VCE(on) Temperature CoefficientE Maximum Junction Temperature rated at 175CVCE(on) typ.
auirgp65g40d0.pdf
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AUIRGP65G40D0AUTOMOTIVE GRADEAUIRGF65G40D0ULTRAFAST IGBT WITHCooliRIGBT ULTRAFAST SOFT RECOVERY DIODEFeaturesC Designed And Qualified for Automotive ApplicationsVCES = 600V Ultra Fast Switching IGBT:70-200kHzVCE(on) typ. = 1.8V Extremely Low Switching Losses Maximum Junction Temperature 175 CGIC@TC=100C = 41A Short Circuit Rated 5SE
auirgp4062d.pdf
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PD - 96353AAUIRGP4062DAUIRGP4062D-EINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 24A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtSC 5s, TJ(max) = 175C 5s SCSOA Square RBSOAEVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co
auirgps4067d1.pdf
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PD - 97726CAUTOMOTIVE GRADEAUIRGPS4067D1INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 160A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching Losses 6s SCSOA G tSC 6s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(on) typ. = 1.70V Positive VCE (on) Tempera
auirg4ph50s.pdf
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AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (
auirgp50b60pd1.pdf
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AUIRGP50B60PD1AUTOMOTIVE GRADE AUIRGP50B60PD1-EWARP2 SERIES IGBT WITHC VCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 2.00V@ VGE = 15V IC = 33AApplications Automotive HEV and EVEquivalent MOSFET PFC and ZVS SMPS CircuitsGParameters FeaturesRCE(on) typ. = 61mE Low VCE(ON) NPT Technology, Positive TemperatureID (FET equivalent) = 50ACoefficie
auirgr4045d.pdf
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PD - 97637AUTOMOTIVE GRADEAUIRGR4045DAUIRGU4045DINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT TechnologyIC = 6.0A, TC = 100C Low Switching Losses Maximum Junction temperature 175 C GVCE(on) typ. = 1.7V 5s SCSOA Square RBSOAE 100% of the parts tested for ILM n-channel
auirgp35b60pd.pdf
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PD - 97675AUTOMOTIVE GRADEAUIRGP35B60PDWARP2 SERIES IGBT WITHC VCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 1.85VFeatures@ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT)Equivalent MOSFET Lower Parasitic CapacitancesG Minimal Tail CurrentParameters HEXFRED Ultra Fast Soft-Recovery Co-Pack DiodeRCE(on)
auirg4bc30u-s.pdf
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PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant
auirgs4062d1.pdf
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AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.
auirgp4062d1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AUIRGP4062D1AUTOMOTIVE GRADE AUIRGP4062D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. EVCE(on) ty
auirgp66524d0.pdf
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AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE CVCES = 600V INOMINAL = 24A E Tsc 6s, TJ(MAX) = 175C GC E G C G EVCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channelAUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector E
auirgp35b60pd-e.pdf
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PD - 97619AUTOMOTIVE GRADEAUIRGP35B60PD-EWARP2 SERIES IGBT WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 1.85VFeatures@ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT)Equivalent MOSFET Lower Parasitic CapacitancesGParameters Minimal Tail CurrentRCE(on) typ. = 84m HEXFRED Ultra Fast Soft-Recov
auirgp4066d1.pdf
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AUIRGP4066D1AUTOMOTIVE GRADE AUIRGP4066D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeaturesIC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching lossesGtSC 5s, TJ(max) = 175C Maximum Junction temperature 175 C 5 S short circuit SOAEVCE(on) typ. = 1.70V Square RBSOAn-channel 100
auirgsl30b60k.pdf
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PD - 96334AUTOMOTIVE GRADEAUIRGS30B60KAUIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Low VCE(on) Non Punch Through IGBT TechnologyIC = 50A, TC=100C 10s Short Circuit Capabilityat TJ=175C Square RBSOA Gtsc > 10s, TJ=150C Positive VCE(on) Temperature CoefficientE Maximum Junction Temperature rated at 175CVCE(on) typ.
auirgsl4062d1.pdf
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AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.
auirgp4063d.pdf
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AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the
auirgps4070d0.pdf
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AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100C 6s SCSOA Gtsc 6s, TJ(MAX) = 175C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V
auirgp4063d auirgp4063d-e.pdf
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AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the
auirgp4062d auirgp4062d-e.pdf
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AUIRGP4062D AUIRGP4062D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC = 24A, TC = 100C 5s SCSOA GtSC 5s, TJ(max) = 175C Square RBSOA E 100% of The Parts Tested for ILM V typ. = 1.60V CE(on)n-channel
auirgdc0250.pdf
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AUTOMOTIVE GRADE AUIRGDC0250 Features C Low VCE (on) Planar IGBT Technology VCES = 1200V Low Switching Losses Square RBSOA IC = 81A @ TC = 100C G 100% of the Parts Tested for ILM VCE(on) typ. = 1.47V @ 33A Positive VCE (on) Temperature Coefficient En-channel Reflow Capable per JDSD22-A113 Lead-Free, RoHS Compliant Automotive Qualifi
auirg4pc40s-e.pdf
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AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (
auirg4ph50s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (
auirg4bc30s-s auirg4bc30s-sl.pdf
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AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
![AUIRGB4062D1](https://alltransistors.com/images/us.png)
![AUIRGB4062D1](https://alltransistors.com/images/es.png)
![AUIRGB4062D1](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ