Справочник IGBT. NGTB40N60IHLWG

 

NGTB40N60IHLWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NGTB40N60IHLWG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 40 nS
   Coesⓘ - Выходная емкость, типовая: 120 pF
   Тип корпуса: TO247

 Аналог (замена) для NGTB40N60IHLWG

 

 

NGTB40N60IHLWG Datasheet (PDF)

 ..1. Size:182K  onsemi
 ngtb40n60ihlwg.pdf

NGTB40N60IHLWG NGTB40N60IHLWG

NGTB40N60IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pa

 5.1. Size:135K  onsemi
 ngtb40n60l2.pdf

NGTB40N60IHLWG NGTB40N60IHLWG

NGTB40N60L2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C40 A, 600 V

 5.2. Size:137K  onsemi
 ngtb40n60fl2wg.pdf

NGTB40N60IHLWG NGTB40N60IHLWG

NGTB40N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 5.3. Size:135K  onsemi
 ngtb40n60l2wg.pdf

NGTB40N60IHLWG NGTB40N60IHLWG

NGTB40N60L2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C40 A, 600 V

 5.4. Size:160K  onsemi
 ngtb40n60flwg.pdf

NGTB40N60IHLWG NGTB40N60IHLWG

NGTB40N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology40 A, 600 V Low Switching Loss R

 5.5. Size:137K  onsemi
 ngtb40n60fl2.pdf

NGTB40N60IHLWG NGTB40N60IHLWG

NGTB40N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top