Справочник IGBT. HGTD7N60C3

 

HGTD7N60C3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HGTD7N60C3
   Тип транзистора: IGBT
   Маркировка: G7N60C
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 14 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 11.5 nS
   Qgⓘ - Общий заряд затвора, typ: 23 nC
   Тип корпуса: TO251

 Аналог (замена) для HGTD7N60C3

 

 

HGTD7N60C3 Datasheet (PDF)

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HGTD7N60C3 HGTD7N60C3

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HGTD7N60C3 HGTD7N60C3

HGTD7N60C3S, HGTP7N60C3Data Sheet December 200114A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =

 0.2. Size:161K  fairchild semi
 hgtd7n60c3s hgtp7n60c3.pdf

HGTD7N60C3 HGTD7N60C3

HGTD7N60C3S, HGTP7N60C3Data Sheet December 200114A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ =

 0.3. Size:282K  onsemi
 hgtd7n60c3s hgtp7n60c3.pdf

HGTD7N60C3 HGTD7N60C3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие IGBT... HGT5A27N120BN , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , CRG60T60AK3HD , HGTD7N60C3S , HGT1S2N120CNS , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN .

 

 
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