IKW40N65F5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKW40N65F5
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 255 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 74 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 13 nS
Coesⓘ - Выходная емкость, типовая: 50 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IKW40N65F5 Datasheet (PDF)
ikp40n65f5 ikw40n65f5.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diodeIKP40N65F5, IKW40N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW40N65F5, IKP40N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID
ikw40n65f5.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP40N65F5, IKW40N65F5650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP40N65F5, IKW40N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1
ikw40n65f5a.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW40N65F5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW40N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar
aikw40n65df5.pdf

AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f
Другие IGBT... NGTB45N60SWG , NGTB50N60S , NGTB50N60SWG , IGW40N65H5 , IGP40N65F5 , IGP40N65H5 , IGW40N65F5 , IKP40N65F5 , IXRH40N120 , NGTB40N60FLWG , STGW15S120DF3 , STGW20IH125DF , STGWA15S120DF3 , STGWT20IH125DF , SML75HB06 , MMG50H120X6TN , MMG50S120B6TN .
History: MG200Q2YS40 | 4MBI400VG-060R-50 | SM2G100US60 | FGPF4565 | IXGH72N60A3 | APTGF75DA60D1 | APT33GF120B2RD
History: MG200Q2YS40 | 4MBI400VG-060R-50 | SM2G100US60 | FGPF4565 | IXGH72N60A3 | APTGF75DA60D1 | APT33GF120B2RD



Список транзисторов
Обновления
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