Справочник IGBT. STGB30H60DLFB

 

STGB30H60DLFB - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGB30H60DLFB
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 260 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 101 pF
   Qgⓘ - Общий заряд затвора, typ: 149 nC
   Тип корпуса: TO263

 Аналог (замена) для STGB30H60DLFB

 

 

STGB30H60DLFB Datasheet (PDF)

 ..1. Size:1739K  st
 stgb30h60dlfb stgw30h60dlfb.pdf

STGB30H60DLFB STGB30H60DLFB

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

 ..2. Size:1739K  st
 stgb30h60dlfb.pdf

STGB30H60DLFB STGB30H60DLFB

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

 4.1. Size:633K  st
 stgb30h60df.pdf

STGB30H60DLFB STGB30H60DLFB

STGB30H60DFSTGP30H60DF30 A, 600 V field stop trench gate IGBT with Ultrafast diodeTarget specificationFeatures Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3211 Ultrafast soft recovery antiparallel diodeTO-220Applications DPAK Motor controlDescription

 4.2. Size:1944K  st
 stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf

STGB30H60DLFB STGB30H60DLFB

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 4.3. Size:798K  st
 stgb30h60dfb stgp30h60dfb.pdf

STGB30H60DLFB STGB30H60DLFB

STGB30H60DFB, STGP30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTABTAB High speed switching series Minimized tail current3 Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A132D PAK TO-220 2 Tight parameter distribution1 Safe paralleling Positive V

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top