Справочник IGBT. STGW30H60DFB

 

STGW30H60DFB - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGW30H60DFB
   Тип транзистора: IGBT + Diode
   Маркировка: GW30H60DFB
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 260 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 14.6 nS
   Coesⓘ - Выходная емкость, типовая: 101 pF
   Qgⓘ - Общий заряд затвора, typ: 149 nC
   Тип корпуса: TO247

 Аналог (замена) для STGW30H60DFB

 

 

STGW30H60DFB Datasheet (PDF)

 ..1. Size:419K  st
 stgw30h60dfb.pdf

STGW30H60DFB STGW30H60DFB

STGW30H60DFB, STGWT30H60DFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A3322 Tight parameters distribution11TO-247 Safe parallelingTO-3P Low thermal resist

 ..2. Size:698K  st
 stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf

STGW30H60DFB STGW30H60DFB

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para

 3.1. Size:1945K  st
 stgw30h60df.pdf

STGW30H60DFB STGW30H60DFB

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 3.2. Size:1944K  st
 stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf

STGW30H60DFB STGW30H60DFB

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 4.1. Size:1739K  st
 stgb30h60dlfb stgw30h60dlfb.pdf

STGW30H60DFB STGW30H60DFB

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

 4.2. Size:1739K  st
 stgw30h60dlfb.pdf

STGW30H60DFB STGW30H60DFB

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

Другие IGBT... STGB30V60DF , STGB30V60F , STGP30V60DF , STGP30V60F , STGW15H120DF2 , STGW15H120F2 , STGW20H65FB , STGW30H60DF , GT30F124 , STGW30H60DLFB , STGW30H65FB , STGW30V60DF , STGW30V60F , STGWA15H120DF2 , STGWA15H120F2 , STGWT20H65FB , STGWT30H60DFB .

 

 
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