STGWA15H120F2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: STGWA15H120F2
Тип транзистора: IGBT + Diode
Маркировка: G15H120F2
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 260
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 15
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.4
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 7
Максимальная температура перехода (Tj), ℃: 175
Время нарастания типовое (tr), nS: 7.4
Емкость коллектора типовая (Cc), pf: 105
Общий заряд затвора (Qg), typ, nC: 67
Тип корпуса: TO247
Аналог (замена) для STGWA15H120F2
STGWA15H120F2 Datasheet (PDF)
stgwa15h120f2.pdf
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STGW15H120F2, STGWA15H120F2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 32 2 TJ=150 C1 1 Safe parallelingTO-247TO-2
stgwa15h120df2.pdf
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STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T
stgw15h120df2 stgwa15h120df2.pdf
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STGW15H120DF2, STGWA15H120DF2DatasheetTrench gate field-stop IGBT, H series 1200 V, 15 A high speedFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3 VCE(sat) = 2.1 V @ IC = 15 A23121 5 s minimum short circuit withstand time at TJ = 150 CTO-247 TO-247 long leads Safe paralleling Low the
stgwa15m120df3.pdf
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STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgw15m120df3 stgwa15m120df3.pdf
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STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgwa15s120df3.pdf
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STGW15S120DF3, STGWA15S120DF3Trench gate field-stop IGBT, S series 1200 V, 15 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling3 Low thermal resistance21 Soft and fast recovery antiparallel diodeTO-247TO-247 long leadsApplicat
Другие IGBT... STGW20H65FB , STGW30H60DF , STGW30H60DFB , STGW30H60DLFB , STGW30H65FB , STGW30V60DF , STGW30V60F , STGWA15H120DF2 , FGH40N60SFD , STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D , IGW50N65F5A .
![STGWA15H120F2](https://alltransistors.com/images/us.png)
![STGWA15H120F2](https://alltransistors.com/images/es.png)
![STGWA15H120F2](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ