IGW50N65H5A Даташит. Аналоги. Параметры и характеристики.
Наименование: IGW50N65H5A
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 270 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.66 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 12 nS
Coesⓘ - Выходная емкость, типовая: 54 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IGW50N65H5A Datasheet (PDF)
igw50n65h5a.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65H5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and reson
aigw50n65h5.pdf

AIGW50N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature
igw50n65h5.pdf

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGW50N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi
igw50n65f5.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW50N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGW50N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant
Другие IGBT... STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D , IGW50N65F5A , CRG40T60AN3H , IKW50N65F5A , IKW50N65H5A , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH .
History: APT50GF120HR | MMG150S120B6TN | APTGF25X120E2 | SGT20T60SD1T | GT80J101 | BLG40T120FUH-F | APTLGF210U120T
History: APT50GF120HR | MMG150S120B6TN | APTGF25X120E2 | SGT20T60SD1T | GT80J101 | BLG40T120FUH-F | APTLGF210U120T



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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