Справочник IGBT. STGW40H65DFB

 

STGW40H65DFB - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGW40H65DFB
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 283 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 13 nS
   Coesⓘ - Выходная емкость, типовая: 198 pF
   Тип корпуса: TO247

 Аналог (замена) для STGW40H65DFB

 

 

STGW40H65DFB Datasheet (PDF)

 ..1. Size:498K  st
 stgw40h65dfb.pdf

STGW40H65DFB STGW40H65DFB

STGW40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A32 Tight parameter distribution1 Safe parallelingTO-247 Positive VCE(sat) temperature coefficient Lo

 5.1. Size:431K  st
 stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf

STGW40H65DFB STGW40H65DFB

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

 5.2. Size:1573K  st
 stgw40h65fb.pdf

STGW40H65DFB STGW40H65DFB

STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution

 6.1. Size:1485K  st
 stgw40h60dlfb.pdf

STGW40H65DFB STGW40H65DFB

STGW40H60DLFB, STGWT40H60DLFBTrench gate field-stop IGBT, HB series 600 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A323 Tight parameters distribution12 Safe paralleling1 L

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