Справочник IGBT. NGTB30N120IHLWG

 

NGTB30N120IHLWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NGTB30N120IHLWG
   Тип транзистора: IGBT + Diode
   Маркировка: 30N120IHL
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 104
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 30
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.75
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 175
   Емкость коллектора типовая (Cc), pf: 245
   Общий заряд затвора (Qg), typ, nC: 420
   Тип корпуса: TO247

 Аналог (замена) для NGTB30N120IHLWG

 

 

NGTB30N120IHLWG Datasheet (PDF)

 0.1. Size:161K  onsemi
 ngtb30n120ihlwg.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 1.1. Size:161K  onsemi
 ngtb30n120ihl.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.1. Size:180K  onsemi
 ngtb30n120ihr.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.2. Size:180K  onsemi
 ngtb30n120ihrwg.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.3. Size:172K  onsemi
 ngtb30n120ihs.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.4. Size:172K  onsemi
 ngtb30n120ihswg.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

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