Справочник IGBT. NGTB30N120IHLWG

 

NGTB30N120IHLWG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGTB30N120IHLWG

Тип транзистора: IGBT

Маркировка: 30N120IHL

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 104

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 30

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.75

Максимальная температура перехода (Tj), ℃: 175

Емкость коллектора типовая (Cc), pf: 245

Тип корпуса: TO247

Аналог (замена) для NGTB30N120IHLWG

 

 

NGTB30N120IHLWG Datasheet (PDF)

 0.1. Size:161K  onsemi
 ngtb30n120ihlwg.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 1.1. Size:161K  onsemi
 ngtb30n120ihl.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.1. Size:180K  onsemi
 ngtb30n120ihr.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.2. Size:172K  onsemi
 ngtb30n120ihs.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.3. Size:180K  onsemi
 ngtb30n120ihrwg.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 2.4. Size:172K  onsemi
 ngtb30n120ihswg.pdf

NGTB30N120IHLWG NGTB30N120IHLWG

NGTB30N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

Другие IGBT... NGTB40N120FL , NGTB40N120FLWG , RJH1CV7DPK , IRGP4760 , IRGP4760D , STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , FGT412 , NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T .

 

 
Back to Top