NGTB30N120IHLWG datasheet, аналоги, основные параметры

Наименование: NGTB30N120IHLWG  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 104 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.75 V @25℃

Coesⓘ - Выходная емкость, типовая: 245 pF

Тип корпуса: TO247

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 Аналог (замена) для NGTB30N120IHLWG

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NGTB30N120IHLWG даташит

 0.1. Size:161K  onsemi
 ngtb30n120ihlwg.pdf pdf_icon

NGTB30N120IHLWG

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 1.1. Size:161K  onsemi
 ngtb30n120ihl.pdf pdf_icon

NGTB30N120IHLWG

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.1. Size:180K  onsemi
 ngtb30n120ihr.pdf pdf_icon

NGTB30N120IHLWG

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 2.2. Size:180K  onsemi
 ngtb30n120ihrwg.pdf pdf_icon

NGTB30N120IHLWG

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NGTB40N120FL, NGTB40N120FLWG, RJH1CV7DPK, IRGP4760, IRGP4760D, STGW25M120DF3, STGWA25M120DF3, NGTB30N120IHL, GT30G122, NGTB40N120IHL, NGTB40N120IHLWG, IRGP4063D1, IRGP4660D, IRGP6660D, MMG50H120X6HN, MMG50S120B6HN, IKW50N60T