IRGP4660D
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRGP4660D
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 330
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
100
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.6
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 6.5
V
Tjⓘ - Максимальная температура перехода:
175
℃
trⓘ -
Время нарастания типовое: 40
nS
Coesⓘ - Выходная емкость, типовая: 245
pF
Qgⓘ - Общий заряд затвора, typ: 95
nC
Тип корпуса:
TO247
Аналог (замена) для IRGP4660D
IRGP4660D
Datasheet (PDF)
..1. Size:363K international rectifier
irgp4660d.pdf 
IRGP4660DPbFIRGP4660D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 60A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 48AETO-247AC TO-247ADn-channelIRGP4660DPbF IRGP4660D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldi
0.1. Size:350K infineon
irgp4660dpbf.pdf 
IRGP4660DPbFIRGP4660D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 60A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 48AETO-247AC TO-247ADn-channelIRGP4660DPbF IRGP4660D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldi
8.1. Size:347K international rectifier
irgp4650d.pdf 
IRGP4650DPbFIRGP4650D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 50A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 35AETO-247AC TO-247ADn-channelIRGP4650DPbF IRGP4650D-EPApplicationsGC E Industrial Motor DriveGate Collector Emitter Inverters UPS Weldi
8.2. Size:154K international rectifier
irgp460lc.pdf 
PD - 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
8.3. Size:901K international rectifier
irgp4620d.pdf 
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 20A, TC =100C E E E E C GC C C G tSC 5s, TJ(max) = 175C G G G EIRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channelApp
8.4. Size:809K international rectifier
irgp4640d.pdf 
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
8.5. Size:1268K international rectifier
irgp4630d.pdf 
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 30A, TC =100C E E E GE C tSC 5s, TJ(max) = 175C C C C G G G G EIRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl
8.6. Size:361K international rectifier
irgp4690d.pdf 
IRGP4690DPbFIRGP4690D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 90A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGVCE(on) typ. = 1.70V @ IC = 75A GETO-247AC TO-247ADn-channelIRGP4690DPbF IRGP4690D-EPApplications Industrial Motor DriveGC E InvertersGate Collector Emitter UPS Weldin
8.7. Size:427K international rectifier
irgp4640.pdf 
IRGP4640PbFIRGP4640-EPbFINSULATED GATE BIPOLAR TRANSISTORVCES = 600VCCCIC = 40A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGE GVCE(on) typ. = 1.60V @ IC = 24An-channelTO-247AC TO-247ADIRGP4640PbF IRGP4640-EPGC EApplications Gate Collector Emitter Inverters UPS WeldingFeatures BenefitsHigh efficiency in a wide range of applications
8.8. Size:966K infineon
irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf 
IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust
8.9. Size:1323K infineon
irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf 
IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust
8.10. Size:333K infineon
irgp4650dpbf.pdf 
IRGP4650DPbFIRGP4650D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCCIC = 50A, TC = 100CtSC 5s, TJ(max) = 175CGEECCGGVCE(on) typ. = 1.60V @ IC = 35AETO-247AC TO-247ADn-channelIRGP4650DPbF IRGP4650D-EPApplicationsGC E Industrial Motor DriveGate Collector Emitter Inverters UPS Weldi
8.11. Size:792K infineon
irgs4640dpbf irgsl4640dpbf irgb4640dpbf irgp4640dpbf irgp4640d-epbf.pdf 
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
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