IRGP4660D - аналоги и описание IGBT

IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 60A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G G VCE(on) typ. = 1.60V @ IC = 48A E TO-247AC TO-247AD n-channel IRGP4660DPbF IRGP4660D-EP Applications Industrial Motor Drive GC E Inverters Gate Collector Emitter UPS Weldi

IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 60A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G G VCE(on) typ. = 1.60V @ IC = 48A E TO-247AC TO-247AD n-channel IRGP4660DPbF IRGP4660D-EP Applications Industrial Motor Drive GC E Inverters Gate Collector Emitter UPS Weldi

IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G G VCE(on) typ. = 1.60V @ IC = 35A E TO-247AC TO-247AD n-channel IRGP4650DPbF IRGP4650D-EP Applications GC E Industrial Motor Drive Gate Collector Emitter Inverters UPS Weldi

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G G VCE(on) typ. = 1.60V @ IC = 35A E TO-247AC TO-247AD n-channel IRGP4650DPbF IRGP4650D-EP Applications GC E Industrial Motor Drive Gate Collector Emitter Inverters UPS Weldi

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 20A, TC =100 C E E E E C G C C C G tSC 5 s, TJ(max) = 175 C G G G E IRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channel App

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 30A, TC =100 C E E E G E C tSC 5 s, TJ(max) = 175 C C C C G G G G E IRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl

IRGP4690DPbF IRGP4690D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 90A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G VCE(on) typ. = 1.70V @ IC = 75A G E TO-247AC TO-247AD n-channel IRGP4690DPbF IRGP4690D-EP Applications Industrial Motor Drive GC E Inverters Gate Collector Emitter UPS Weldin

IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C C C IC = 40A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G E G VCE(on) typ. = 1.60V @ IC = 24A n-channel TO-247AC TO-247AD IRGP4640PbF IRGP4640-EP GC E Applications Gate Collector Emitter Inverters UPS Welding Features Benefits High efficiency in a wide range of applications

IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC