Справочник IGBT. MMG50S120B6HN

 

MMG50S120B6HN - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MMG50S120B6HN
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 330 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 40 nS
   Qgⓘ - Общий заряд затвора, typ: 230 nC
   Тип корпуса: MODULE

 Аналог (замена) для MMG50S120B6HN

 

 

MMG50S120B6HN Datasheet (PDF)

 ..1. Size:342K  macmic
mmg50s120b6hn.pdf

MMG50S120B6HN
MMG50S120B6HN

MMG50S120B6HN1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching loss

 3.1. Size:221K  macmic
mmg50s120b6tc.pdf

MMG50S120B6HN
MMG50S120B6HN

MMG50S120B6TC1200V 50A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency swi

 3.2. Size:347K  macmic
mmg50s120b6tn.pdf

MMG50S120B6HN
MMG50S120B6HN

MMG50S120B6TN1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

 3.3. Size:199K  macmic
mmg50s120b6uc.pdf

MMG50S120B6HN
MMG50S120B6HN

MMG50S120B6UC1200V 50A IGBT ModuleDecember 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-invert

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