NGTB20N120IH - параметры транзистора, его аналоги, Даташиты

NGTB20N120IH - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

   Наименование: NGTB20N120IH
   Тип транзистора: IGBT + Diode
   Маркировка: 20N120IH
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 170
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 20
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.2
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 175
   Емкость коллектора типовая (Cc), pf: 90
   Общий заряд затвора (Qg), typ, nC: 150
   Тип корпуса: TO247

Аналог (замена) для NGTB20N120IH

NGTB20N120IH Datasheet (PDF)

..1. Size:109K onsemi
ngtb20n120ih.pdf

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures

0.1. Size:174K onsemi
ngtb20n120ihl.pdf

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

0.2. Size:182K onsemi
ngtb20n120ihswg.pdf

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

0.3. Size:109K onsemi
ngtb20n120ihwg.pdf

0.4. Size:181K onsemi
ngtb20n120ihr.pdf

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica

0.5. Size:181K onsemi
ngtb20n120ihrwg.pdf