Справочник IGBT. NGTB20N120IH

 

NGTB20N120IH Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB20N120IH
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 90 pF
   Тип корпуса: TO247
 

 Аналог (замена) для NGTB20N120IH

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NGTB20N120IH Datasheet (PDF)

 ..1. Size:109K  onsemi
 ngtb20n120ih.pdf pdf_icon

NGTB20N120IH

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures

 0.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N120IH

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 0.2. Size:182K  onsemi
 ngtb20n120ihswg.pdf pdf_icon

NGTB20N120IH

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 0.3. Size:109K  onsemi
 ngtb20n120ihwg.pdf pdf_icon

NGTB20N120IH

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR , NGTB15N120IHRWG , FGH40N60UFD , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , IHW30N135R3 .

 

 
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