MMG50HB120H6UN Даташит. Аналоги. Параметры и характеристики.
Наименование: MMG50HB120H6UN
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 350 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.5 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 50 nS
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
MMG50HB120H6UN Datasheet (PDF)
mmg50hb120h6un.pdf

MMG50HB120H6UN 1200V 50A Four-Pack Module February 2012 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg50hb120h6hn.pdf

MMG50HB120H6HN1200V 50A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching
mmg50h120x6tn.pdf

MMG50H120X6TN1200V 50A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated
mmg50h060xb6en.pdf

MMG50H060XB6EN600V 50A PIM ModuleJanuary 2017 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copp
Другие IGBT... MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , IHW30N135R3 , IRG8P50N120KD , MMG100HB060H6EN , RJP30E2DPP-M0 , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF , NGTB40N60FL2 , NGTB40N60FL2WG .
History: YGW25N120T1 | HM20N120TB | SGM100HF12A1TFDT4 | OST40N120HEMF | SGB10N60A | IRGI4086 | HGTH12N40C1
History: YGW25N120T1 | HM20N120TB | SGM100HF12A1TFDT4 | OST40N120HEMF | SGB10N60A | IRGI4086 | HGTH12N40C1



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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