Справочник IGBT. NGTB40N60FL2

 

NGTB40N60FL2 Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB40N60FL2
   Тип транзистора: IGBT + Diode
   Маркировка: 40N60FL2
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 183 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 40 nS
   Coesⓘ - Выходная емкость, типовая: 179 pF
   Qg ⓘ - Общий заряд затвора, typ: 170 nC
   Тип корпуса: TO247
 

 Аналог (замена) для NGTB40N60FL2

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NGTB40N60FL2 Datasheet (PDF)

 ..1. Size:137K  onsemi
 ngtb40n60fl2.pdf pdf_icon

NGTB40N60FL2

NGTB40N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 0.1. Size:137K  onsemi
 ngtb40n60fl2wg.pdf pdf_icon

NGTB40N60FL2

NGTB40N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 3.1. Size:160K  onsemi
 ngtb40n60flwg.pdf pdf_icon

NGTB40N60FL2

NGTB40N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology40 A, 600 V Low Switching Loss R

 5.1. Size:182K  onsemi
 ngtb40n60ihlwg.pdf pdf_icon

NGTB40N60FL2

NGTB40N60IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pa

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... MMG100HB060H6EN , MMG50HB120H6UN , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF , IRG7IC28U , NGTB40N60FL2WG , NGTB40N65FL2 , MMG75S060B6EN , STGW25H120DF2 , STGW25H120F2 , STGW25S120DF3 , STGW28IH125DF , STGW60H60DLFB .

 

 
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