Справочник IGBT. NGTB20N120IHRWG

 

NGTB20N120IHRWG Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB20N120IHRWG
   Тип транзистора: IGBT + Diode
   Маркировка: 20N120IHR
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 192 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 124 pF
   Qg ⓘ - Общий заряд затвора, typ: 225 nC
   Тип корпуса: TO247
 

 Аналог (замена) для NGTB20N120IHRWG

   - подбор ⓘ IGBT транзистора по параметрам

 

NGTB20N120IHRWG Datasheet (PDF)

 0.1. Size:181K  onsemi
 ngtb20n120ihrwg.pdf pdf_icon

NGTB20N120IHRWG

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica

 1.1. Size:181K  onsemi
 ngtb20n120ihr.pdf pdf_icon

NGTB20N120IHRWG

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica

 2.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N120IHRWG

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.2. Size:182K  onsemi
 ngtb20n120ihswg.pdf pdf_icon

NGTB20N120IHRWG

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STGWA25S120DF3 , STGWA60H65DFB , STGWT28IH125DF , STGWT60H60DLFB , STGWT60H65DFB , STGWT60H65FB , STGWT60V60DF , NGTB20N120IHR , NGD8201N , NGTB30N120IHR , NGTB30N120IHRWG , NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG , NGTB25N120S , NGTB25N120SWG .

History: IHW30N160R5 | IXGH36N60B3C1 | FGB3040G2-F085C | IXGH30N60C2D1

 

 
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