NGTB30N120IHR datasheet, аналоги, основные параметры

Наименование: NGTB30N120IHR  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 192 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃

Coesⓘ - Выходная емкость, типовая: 124 pF

Тип корпуса: TO247

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 Аналог (замена) для NGTB30N120IHR

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NGTB30N120IHR даташит

 ..1. Size:180K  onsemi
 ngtb30n120ihr.pdf pdf_icon

NGTB30N120IHR

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 0.1. Size:180K  onsemi
 ngtb30n120ihrwg.pdf pdf_icon

NGTB30N120IHR

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 2.1. Size:161K  onsemi
 ngtb30n120ihlwg.pdf pdf_icon

NGTB30N120IHR

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.2. Size:172K  onsemi
 ngtb30n120ihs.pdf pdf_icon

NGTB30N120IHR

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STGWA60H65DFB, STGWT28IH125DF, STGWT60H60DLFB, STGWT60H65DFB, STGWT60H65FB, STGWT60V60DF, NGTB20N120IHR, NGTB20N120IHRWG, IRGP4063D, NGTB30N120IHRWG, NGTB40N120IHR, NGTB40N120IHRWG, NGTB25N120FL2, NGTB25N120FL2WG, NGTB25N120S, NGTB25N120SWG, NGTG25N120FL2