NGTB25N120SWG - аналоги и описание IGBT

 

NGTB25N120SWG - аналоги, основные параметры, даташиты

Наименование: NGTB25N120SWG

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 192 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 25 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃

tr ⓘ - Время нарастания типовое: 74 nS

Coesⓘ - Выходная емкость, типовая: 151 pF

Тип корпуса: TO247

 Аналог (замена) для NGTB25N120SWG

- подбор ⓘ IGBT транзистора по параметрам

 

NGTB25N120SWG даташит

 ..1. Size:84K  onsemi
ngtb25n120swg.pdfpdf_icon

NGTB25N120SWG

NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 3.1. Size:86K  onsemi
ngtb25n120s.pdfpdf_icon

NGTB25N120SWG

NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast http //onsemi.co

 4.1. Size:186K  onsemi
ngtb25n120fl.pdfpdf_icon

NGTB25N120SWG

NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

 4.2. Size:148K  onsemi
ngtb25n120fl2.pdfpdf_icon

NGTB25N120SWG

NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

Другие IGBT... NGTB20N120IHRWG , NGTB30N120IHR , NGTB30N120IHRWG , NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG , NGTB25N120S , SGP30N60 , NGTG25N120FL2 , NGTG25N120FL2WG , NGTB20N135IHR , NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG .

 

 

 


 
↑ Back to Top
.