Справочник IGBT. 50MT060ULSTAPBF

 

50MT060ULSTAPBF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: 50MT060ULSTAPBF
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 445 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.69 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   Coesⓘ - Выходная емкость, типовая: 602 pF
   Qgⓘ - Общий заряд затвора, typ: 370 nC
   Тип корпуса: MODULE

 Аналог (замена) для 50MT060ULSTAPBF

 

 

50MT060ULSTAPBF Datasheet (PDF)

 0.1. Size:246K  vishay
 50mt060ulstapbf.pdf

50MT060ULSTAPBF 50MT060ULSTAPBF

50MT060ULSTAPbFVishay High Power Products"Low Side Chopper" IGBT MTP(Ultrafast Speed IGBT), 100 AFEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverseRoHSrecoveryCOMPLIANT Very low conduction and switching losses Optional SMD thermistor (NTC) Al2O3 DBC Very low stray inductance design for high speed operation

 6.1. Size:225K  vishay
 50mt060u.pdf

50MT060ULSTAPBF 50MT060ULSTAPBF

50MT060ULSTAPbFwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 AFEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverserecovery Very low conduction and switching losses Optional SMD thermistor (NTC) Al2O3 DBC Very low stray inductance design for high speed operation UL ap

 7.1. Size:184K  vishay
 vs-150mt060wdf.pdf

50MT060ULSTAPBF 50MT060ULSTAPBF

VS-150MT060WDFwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Dual ForwardFEATURES Buck PFC stage with warp 3 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial levelMTP Material categor

 7.2. Size:132K  vishay
 50mt060whtapbf.pdf

50MT060ULSTAPBF 50MT060ULSTAPBF

50MT060WHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 AFEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoftreverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP Speed 60 kHz

 7.3. Size:134K  vishay
 vs-50mt060whtapbf.pdf

50MT060ULSTAPBF 50MT060ULSTAPBF

VS-50MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp Speed IGBT), 114 AFEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP

Другие IGBT... RJH65S04DPQ-A0 , 1MBI75U4F-120L-50 , IRG7PH50K10D , MMG50A120B6C , MM40G120L , MMG100J060U , MMG50J120UZ , MMG100S060B6EN , IRG7S313U , VS-GB70LA60UF , VS-GB70NA60UF , IRGP4266 , MMG100S120B6TN , MMG100W120X6TN , NGTB30N120FL2 , NGTB30N120FL2WG , IRGP4690D .

 

 
Back to Top