HGTG20N60B3 - аналоги и описание IGBT

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oC HGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capability switching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .

HGTP20N60B3, S E M I C O N D U C T O R HGTG20N60B3 February 1996 40A, 600V, UFS Series N-Channel IGBT JEDEC TO-220AB Features Package EMITTER COLLECTOR 40A, 600V at TC = +25oC GATE Square Switching SOA Capability COLLECTOR (FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction Loss JEDEC STYLE TO-247 Description EMITTER The HGTP20N6

HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oC voltage switching devices combining the best features of 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC h

S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package 40A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oC E C Short Circuit Rated G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG20N60B3D is a MOS gated high voltage switching

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs Short Circuit Rated and bipolar transistors. The device has

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as 600V Switching SOA Capability other high voltage switching applications. These

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. This device has the high input impedance o

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20A high voltage switching devices combining the best features 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capability high input impedance of a

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HGTG20N60A4, HGTP20N60A4 Data Sheet April 2013 File Number Features 600 V SMPS IGBT 40 A, 600 V @ TC = 110 C The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the Low Saturation Voltage VCE(sat) = 1.8 V @ IC = 20 A low on-state conduction loss of a bipolar transistor. This Typical Fall Time............55ns at TJ = 1

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as 600V Switching SOA Capability other high voltage switching applications. These