MMG600K120U6TN - аналоги, основные параметры, даташиты
Наименование: MMG600K120U6TN
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 2800 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 600 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
tr ⓘ - Время нарастания типовое: 90 nS
Тип корпуса: MODULE
Аналог (замена) для MMG600K120U6TN
- подбор ⓘ IGBT транзистора по параметрам
MMG600K120U6TN даташит
mmg600k120u6tn.pdf
MMG600K120U6TN 1200V 600A IGBT Module December 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient With Fast Free-Wheeling Diodes 10K Gate Protected Resistance Inside APPLICATIONS Inverter Convertor Welder SMPS and UPS Induction Heating ABSOLUTE
mmg600k120u6hn.pdf
MMG600K120U6HN 1200V 600A IGBT Module June 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching los
mmg600k170u6en.pdf
MMG600K170U6EN 1700V 600A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery 5K Gate Protected Resistance Inside APP
mmg600k060u6en.pdf
MMG600K060U6EN 600V 600A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
Другие IGBT... MMG200DR060UK , MMG200DR060UZA , MMG200DR060UZK , MMG450WB060B6EN , T0500NB25E , T0340VB45G , MMG800K060U6EN , MMG600K120U6HN , FGH30S130P , MMG600K170U6EN , T0570VB25G , MMG600KR120U , MMG800K120U6HN , MMG400K170U6EN , IRG7PSH54K10D , MMG100S060B6R , MMG75S170B6EN .
History: JJT10N65SCD | MMG75S120B6UN | DM2G150SH6NE | DM2G200SH12A
History: JJT10N65SCD | MMG75S120B6UN | DM2G150SH6NE | DM2G200SH12A
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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